Microwave plasmas for low-temperature dry sterilization

The ion-bombardment induced surface and bulk processes during hydrogenated amorphous silicon (a‐Si:H) deposition have been studied by employing an external rf substrate bias (ERFSB) in a remote Ar–H2–SiH4 expanding thermal plasma (ETP). The comparison of the ETP chemical vapor deposition without and with ERFSB enables us to identify some important ion-surface and ion-bulk interactions responsible for film property modifications. Employing ERFSB creates an additional growth flux and the low energetic ions deliver an extra 5–10eV per Si atom deposited at typical deposition rates of 10–42A∕s which is a sufficient ion dose to modify the film growth. It is demonstrated that the extra surface and bulk process during a‐Si:H growth, induced by the additional ion bombardment, provide an extra degree of freedom to manipulate the a‐Si:H microstructure. An ion-film interaction diagram is introduced, which is used to discriminate ion-surface interactions from ion-bulk interactions. According to this ion-film interacti...

/pdf/the-effect-of-ion-surface-and-ion-bulk-interactions-during-2cmseb2ig5.pdf

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

An apparatus and a method for producing layers on the surfaces of workpieces, preferably on spotlight, or headlight, reflector inserts formed of plastic, includes an apparatus having a vacuum chamber that can be operated as a batch system with a PCVD coating process, where a microwave ECR plasma coating source is used, and the workpieces to be coated are secured to a rotary cage arranged in the vacuum chamber. The rotary cage can be conducted past a microwave coating source with a frequency-matched and phase-matched planetary motion. Such a coating process can be used in a vacuum chamber, under plasma, and at pressures below 2×10 -2 mbar.

Apparatus for coating substrates using a microwave ECR plasma source

The behavior of electron‐cyclotron resonant (ECR) and non‐ECR H2 plasmas generated in a microwave plasma chemical‐vapor deposition reactor have been studied as a function of magnetic field strength and absorbed microwave power. Plasma diagnostics were performed with a planar electrostatic probe, microwave power measurements, and visual inspection. The probe measurements were concerned with the plasma impingent on a sample table placed downstream from the active core of the plasma. ECR plasmas were found to be more efficient, stable, uniform, and dense than plasmas not generated by ECR. All properties of the ECR plasmas measured by the downstream probe showed a gentle monotonic increase with the magnetic field strength. This was attributed to a reduction in the spacing between the probe and the resonant zone. In the ECR plasmas the average electron temperature was 3 eV and the average density was 1016 m−3. The degree of ionization was on the order of 5×10−4.

Behavior of downstream plasmas generated in a microwave plasma chemical-vapor deposition reactor

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for deposition on conductive substrates and for deposition of conductive materials on nonconductive substrates. Presence of negative ions/particles in the Ar–H2–SiH4 plasma is deduced from a voltage offset during biasing. Densification of the material at low Urbach energies is observed at a deposited energy 4.8?eV/Si atom is attributed to bulk atom displacement in subsurface layers. We make the unique experimental abservation of a decreasing Tauc band gap at increasing total hydrogen concentration—this allows to directly relate the band gap of amorphous silicon to the presence of nanovoids in the material.

/pdf/hydrogenated-amorphous-silicon-deposited-under-accurately-2xbs0bm2hp.pdf

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

The optical, electronic, and structural properties of a-Si:H films deposited by ECR microwave plasmas at 10−3 torr have been studied as functions of substrate bias. Films deposited on quartz and stainless steel substrates with their surfaces normal to the fringing magnetic field display good optical and electronic properties. For moderate negative bias the films deposited on stainless steel consistently displayed higher density and better optical and electronic properties compared to films deposited on quartz. These properties are explained based on ion energy bombardment of the growing films and correlated with Langmuir probe plasma studies. Ion bombardment of the growing film is seen to play an important role in film quality.

Effects of substrate bias on structure and properties of a-Si:H films deposited by ECR microwave plasmas

Electron cyclotron resonance microwave-plasma etching of Si and SiO2 using a (CF4 + O2) gas mixture is investigated in a magnetically confined plasma. High etch rates have been obtained at 0.8 Torr pressure, where the etching mechanism may be due primarily to neutral active species (1 Torr = 133 Pa). The high etch rate can be explained by a high dissociation efficiency of the ECR microwave plasma, and the directionality by carbon deposits associated with it. The magnetic confinement is likely to play a role similar to that of ion and electron screening.

Electron cyclotron resonance microwave-plasma etching

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Effects of substrate bias on structure and properties of a-Si:H films deposited by ECR microwave plasmas

Electron cyclotron resonance microwave-plasma etching