A giant current-to-voltage (I-V) gyration effect was found in magnetostrictive Tb1−xDyxFe2−y and piezoelectric Pb(Zr,Ti)O3 laminated composites. An equivalent circuit theory was developed for magnetoelectric gyration, which predicted that I-V conversion is reduced by a frequency transfer function ZR(f) and that the maximum occurs at resonance. A giant conversion coefficient up to 2500V∕A was predicted and confirmed.

/pdf/magnetoelectric-gyration-effect-in-tb1-xdyxfe2-y-pb-zr-ti-o3-qfmi6psnd0.pdf

Magnetoelectric gyration effect in Tb1−xDyxFe2−y∕Pb(Zr,Ti)O3 laminated composites at the electromechanical resonance

The need for different types of wireless connections to mobile terminals has increased rapidly during the last few years. The mobile terminal must be able to connect to globally existing cellular networks, as well as to different ad-hoc networks. The receivers designed for these terminals must achieve a high integration level and a high level of component sharing to meet the strict size and cost requirements. In addition, the performance of a multimode receiver must be compatible with existing single-system receivers. New process technologies, which use low supply voltages and are optimised for digital circuitry, set additional challenges for future receiver design. Several integrated receiver ICs for the multimode and multiband transceivers have been published to meet these demands. This paper gives a review of these circuit solutions and a brief introduction to the demands set by different systems and receiver architectures for the design of the multimode and multiband receiver

Integrated circuits for multiband multimode receivers

We report an ultra-low-voltage RF receiver for applications in the 2.4 GHz band, designed in a 90 nm CMOS technology. The sliding-IF receiver prototype includes an LNA, an image-reject LC filter with single-ended to differential conversion, an RF mixer, an LC IF filter, a quadrature IF mixer, RF and IF LO buffers, and an I/Q baseband section with a VGA and a low-pass channel-select filter in each path, all integrated on-chip. It has a programmable overall gain of 30 dB, noise figure of 18 dB, out-of-channel IIP3 of -22 dBm. The 3.4 mm2 chip consumes 8.5 mW from a 0.5 V supply.

A 2.4-GHz ISM-Band Sliding-IF Receiver With a 0.5-V Supply

A tunable CMOS Gm-C channel-select low-pass filter is presented. Class AB operation overcomes the dynamic range versus static power tradeoff of conventional channel-select filter topologies. Programmable transconductors are designed using quasi-floating gate transistors, which provide class AB operation without requiring extra supply voltage or power requirements and keeping accurately set quiescent currents. The filter can be applied to channel selection in highly integrated, low power zero-IF wireless receivers. For example, its frequency tuning range and linearity makes it suitable for a dual-mode Bluetooth/ZigBee zero-IF receiver. Measurement results for a test chip prototype in a 0.5 μm standard CMOS process are presented, showing a THD <; -55 dB for an input of 1.2 Vpp, which corresponds to peak currents 300% larger than the bias current.

Tunable Class AB CMOS Gm-C Filter Based on Quasi-Floating Gate Techniques

Realizations of voltage-mode and current-mode complex filters based on transconductance, transresistance, and current amplifiers for intermediate frequency (IF) applications are systematically developed. Various amplifiers are realized utilizing the second generation current conveyor (CCII) to promote comparisons at device levels. The adopted approach shows that the most efficient designs in terms of the number of active components are current-mode filters based on the transconductance and current amplifiers. As an application example, a 4th-order complex filter based on the CA is designed for low-IF Bluetooth receiver. Fabricated in a standard 0.18 μm CMOS technology, experimental results show that the proposed design offers improved characteristics over the available solutions in terms of power consumption and spurious-free dynamic range (SFDR). The filter exhibits in-band SFDR of 65.8 dB while consuming 1 mW.

/pdf/optimal-low-power-complex-filters-2gvk5nphoj.pdf

Optimal Low Power Complex Filters

A low-IF polyphase channel filter for a dual-mode Bluetooth/Zigbee transceiver is described. Implemented in a standard 0.18-/spl mu/m CMOS process, the filter has a fifth-order 0.5-dB equiripple bandpass response and employs novel transconductor and preamplifier designs. It consumes /spl les/1 mW and achieves image band rejection /spl ges/44 dB, input referred noise of /spl les/52.2 /spl mu/Vrms and input referred third-order intermodulation intercept of /spl ges/20 dBVp, which gives a spurious-free dynamic range of /spl ges/68.4 dB. Chip area including its tuning circuit is 0.23 mm/sup 2/.

A CMOS gyrator low-IF filter for a dual-mode Bluetooth/ZigBee transceiver

A low-IF polyphase channel filter for a dual-mode Bluetooth/Zigbee transceiver is described. Implemented in a standard 0.18-μm CMOS process, the filter has a fifth-order 0.5-dB equiripple bandpass response and employs novel transconductor and preamplifier designs. It consumes 44 dB, input referred noise of 20 dBVp, which gives a spurious-free dynamic range of ≥68.4 dB. Chip area including its tuning circuit is 0.23 mm 2 .

A CMOS gyrator low-IF filter for a dual-mode bluetooth/zigbee transceiver

A low-IF polyphase channel filter for a dual-mode Bluetooth/ZigBee transceiver is described. Implemented in a standard 0.18 /spl mu/m CMOS process, the filter has a fifth-order 0.5 dB equiripple bandpass response and employs novel transconductor and preamplifier designs. It consumes 1 mW and achieves image band rejection /spl ges/33 dB, signal-to-noise ratio of /spl ges/60 dB and input referred third-order intermodulation intercept of /spl ges/17 dBVp. Chip area, including its tuning circuit, is 0.23 mm/sup 2/.

A CMOS gyrator low-IF filter for a dual-mode Bluetooth/ZigBee transceiver [mobile phone applications]

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A CMOS gyrator low-IF filter for a dual-mode Bluetooth/ZigBee transceiver

A CMOS gyrator low-IF filter for a dual-mode bluetooth/zigbee transceiver

A CMOS gyrator low-IF filter for a dual-mode Bluetooth/ZigBee transceiver [mobile phone applications]