The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

/pdf/a-comprehensive-review-of-zno-materials-and-devices-21a3zjadem.pdf

A comprehensive review of zno materials and devices

Control of preferred orientation for ZnOx films: control of self-texture

ZnO:Al coatings were prepared by rf magnetron sputtering of ZnO together with dc magnetron sputtering of Al onto rapidly revolving unheated substrates under weakly oxidizing conditions. Optimized films had ∼1% luminous absorptance, ∼85% thermal infrared reflectance, and ∼5×10−4 Ω cm electrical resistivity at a thickness of ∼0.3 μm. The Al content was ≲2 at. %, as determined by Rutherford backscattering spectrometry. Transmission electron microscopy and electron diffraction showed ∼50‐nm average crystallite size and a hexagonal wurtzite structure. Spectrophotometric transmittance and reflectance were recorded in the 0.2–50‐μm wavelength interval, and the complex dielectric function was evaluated by computation. The optical data were explained from an effective mass model for n‐doped semiconductors. The Al atoms are singly ionized, and the associated electrons occupy the bottom of the conduction band as free‐electron gas. The Al ions act as pointlike Coulomb scatterers and are screened by the electrons acco...

Optical properties of sputter-deposited ZnO:Al thin films

Recent developments on the preparation and application of ZnO films for acoustic wave-based microfluidics and biosensors are reviewed in this paper. High quality and strongly textured ZnO thin films can be prepared using many technologies, among which RF magnetron sputtering is most commonly used. This paper reviews the deposition of ZnO film and summarizes the factors influencing the microstructure, texture and piezoelectric properties of deposited ZnO films. ZnO acoustic wave devices can be successfully used as biosensors, based on the biomolecule recognition using highly sensitive shear horizontal and Love-wave surface acoustic waves, as well as film bulk acoustic resonator devices. The acoustic wave generated on the ZnO acoustic devices can induce significant acoustic streaming, small scale fluid mixing, pumping, ejection and atomization, depending on the wave mode, amplitude and surface condition. The potential to fabricate an integrated lab-on-a-chip diagnostic system based on these ZnO acoustic wave technologies is also discussed.

/pdf/recent-developments-on-zno-films-for-acoustic-wave-based-bio-35es1x3me2.pdf

Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications: a review

The highly conductive and textured ZnO films have been grown by metalorganic chemical vapor deposition using diethylzinc and H2O as reactant gases. The B2H6 gas has also been successfully used as an n‐type dopant gas to obtain highly conductive ZnO with a sheet resistivity for 2‐μm‐thick film as low as 10 Ω/⧠ at the very low temperature of 150 °C. It was found that the crystal orientation and grain structure change with B2H6 flow rate. The decreasing of the film transmittance due to the free‐carrier absorption in the wavelength region above 1000 nm was observed and it seems that the impurity scattering was the dominant interaction during this process. The shift of the absorption edge due to band filling was also observed as the B2H6 flow rate was increased.

Electrical and optical properties of boron‐doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition

Single‐crystal films of ZnO have been epitaxially grown on the (0001) and (0112) planes of sapphire by rf sputtering. Crystalline structures and electrical properties of the films were investigated. Surface acoustic wave (SAW) properties, including a phase velocity, a coupling coefficient, a propagation loss, and a temperature coefficient of delay, were measured for SAW propagating along the c‐axis of the ZnO films, on the (0112) planes of sapphire. Availability of this structure for high‐frequency SAW devices has been demonstrated by a filter with a 1050‐MHz center frequency.

Structures and SAW properties of rf‐sputtered single‐crystal films of ZnO on sapphire

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Structures and SAW properties of rf‐sputtered single‐crystal films of ZnO on sapphire