A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Method for introducing impurities and apparatus for introducing impurities

A method for forming an impurity-introduced layer is disclosed which at least comprises a step for forming a resist pattern on one major surface of a solid base such as a silicon substrate (S27), a step for introducing impurities into the solid base through plasma doping in the ion mode (S23), a step for removing the resist (S28), a step for cleaning the solid base surface by removing metal contamination and particles (S25a), and a step for performing a heat treatment (S26). The resist removing step (S28) is performed by irradiating the resist with an oxygen plasma (S28a) or by bringing the resist into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH4OH, H2O2 and H2O. The cleaning step (S25a) is performed by bringing the major surface of the solid base into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH4OH, H2O2 and H2O. The resist removing step (S28) and the cleaning step (S25a) are performed at the same time by bringing the resist and the major surface of the solid base into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH4OH, H2O2 and H2O at onece.

Method for forming impurity-introduced layer, method for cleaning object to be processed, apparatus for introducing impurity and method for producing device

As a paradigmatic microwave photonic resonant system that is capable of producing high-quality self-sustained microwave oscillations, the optoelectronic oscillator (OEO) has been intensively investigated in recent years, and a diversity of new insights and breakthroughs have been proposed and demonstrated. In this perspective, we discuss the recent progress, opportunities, and challenges of OEOs. Specifically, an overview of different OEO schemes for single-frequency and complex microwave signal generation is provided. Emerging advances in integrated OEO and applications of OEO are briefly reviewed. We also discuss the remaining challenges and opportunities in this field.

https://aip.scitation.org/doi/pdf/10.1063/5.0134289

Perspectives on optoelectronic oscillators

A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.

Process for fabricating semiconductor device

The thermo-optic effect is a crucial driving mechanism for optical devices. The application of the thermo-optic effect in integrated photonics has received extensive investigation, with continuous progress in the performance and fabrication processes of thermo-optic devices. Due to the high thermo-optic coefficient, polymers have become an excellent candidate for the preparation of high-performance thermo-optic devices. Firstly, this review briefly introduces the principle of the thermo-optic effect and the materials commonly used. In the third section, a brief introduction to the waveguide structure of thermo-optic devices is provided. In addition, three kinds of thermo-optic devices based on polymers, including an optical switch, a variable optical attenuator, and a temperature sensor, are reviewed. In the fourth section, the typical fabrication processes for waveguide devices based on polymers are introduced. Finally, thermo-optic devices play important roles in various applications. Nevertheless, the large-scale integrated applications of polymer-based thermo-optic devices are still worth investigating. Therefore, we propose a future direction for the development of polymers.

Polymer and Hybrid Optical Devices Manipulated by the Thermo-Optic Effect

In this paper, based on the low loss double strip silicon nitride platform, we designed and fabricated an ultra-low loss 1×4 microwave photonic beamforming chip, which contains a 1×4 beam splitter and four 5-bit optical delay lines. Each optical delay line can achieve 32 delay states varying from 0 ps to about 130 ps, which can support 21 different beamforming angles covers from -56.42° to 56.68° for 10 GHz RF signal. A low on-chip insertion loss of about 4 dB is achieved for each 5-bit optical delay line. Furthermore, a very low loss delay ratio of about 0.0016 dB/ps is achieved and a recorded low loss fluctuation of about 0.3 dB is obtained during the 32 states delay switching. In addition, the switching speed and driving power consumptions of the proposed beamforming chip were investigated. The proposed beamforming chip could have great potential in optical controlled phased antenna arrays systems.

Low loss silicon nitride 1×4 microwave photonic beamforming chip.

Performance comparison of integrated optical switching delay lines on three typical photonic integration pilot lines

Microwave frequency combs (MFCs) have important applications in communication and sensing owing to their characteristics of large number of comb lines, wide frequency range, and high precision of comb spacing. In many applications, MFCs are required to emit signals with tunable center frequency and variable comb spacing to accommodate different operating frequency bands and accuracies. Here, we demonstrate a tunable MFC by injecting a low-frequency electrical signal into a tunable optoelectronic oscillator (OEO). Tuning of MFC's center frequency and comb spacing are realized, allowing a frequency tuning range from 1 to 22 GHz and 50 comb lines within a 5 MHz bandwidth obtained in the MFC generator. In addition, the introduction of the silicon nitride micro-disk resonator (Si3N4-MDR) in the system paves the way for the integration of MFC generator.

Tunable microwave frequency comb generation using a Si3N4-MDR based actively mode-locked OEO.

For the silicon photonics integrated circuits, the optical switch plays a vital role in many applications. Large scale integration requires low switching power and fast switching speed. However the switching time and switching power of silicon thermo-optic switch are typically limited to tens of micro-seconds and tens of milli-watts, respectively. In this paper, we designed and fabricated a silicon thermo-optic switch with spiral optical phase shifters, which can reduce the switching power from 21.5 mW to 8.73 mW compared to the optical switch with straight phase shifters. Furthermore, we optimized the pulse driving, we proposed the calculation formula of the pulse voltage, and the overall quantitative scheme of the pulse voltage and pulse width. By adopting the optimized pulse driving, the switching time is reduced from 27 μs to 4 μs. The proposed silicon thermo-optic switch unit with optimized pulse driving is very promising for the applications where large scale integration of optical switches is needed.

Improving Performance of Silicon Thermo-Optic Switch by Combing Spiral Phase Shifter and Optimized Pulse Driving

In this paper, for the first time, we report the effect of pre-amorphization for the reduction of contact resistance of CoSi/sub 2/-Si using Laser Thermal Process (LTP). Owing to the lower melting point of pre-amorphized Si, we can achieve much lower contact resistance in the lower laser power conditions. And the larger junction leakage current and junction capacitance can be much reduced by combining pre-doping and pre-RTA technique with LTP.

Impact of pre-amorphization for the reduction of contact resistance using laser thermal process

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