T. Kishida
Tokyo Institute of Technology
6 Papers
66 Citations
T. Kishida is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Planar & Pixel. The author has an hindex of 4, co-authored 6 publications.
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Papers
Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results
Jens Weingarten,S. Altenheiner,M. Beimforde,Mathieu Benoit,Marco Bomben,G. Calderini,C. Gallrapp,M. George,Stephen Gibson,Sebastian Grinstein,Z. Janoska,J. Jentzsch,Osamu Jinnouchi,T. Kishida,A. La Rosa,V. Libov,Anna Macchiolo,G. Marchiori,D. Münstermann,Ryo Nagai,Giacinto Piacquadio,B. Ristic,I. Rubinskiy,Andre Rummler,Yosuke Takubo,G. Troska,S. Tsiskaridtze,I. Tsurin,Y. Unno,P. Weigell,T. Wittig +30 more
TL;DR: In this article, beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented.
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Development of novel n+-in-p Silicon Planar Pixel Sensors for HL-LHC
Yoshinobu Unno,C. Gallrapp,R. Hori,J. Idarraga,S. Mitsui,Ryo Nagai,T. Kishida,A. Ishida,M. Ishihara,S. Kamada,T. Inuzuka,Kazuhisa Yamamura,Kazuhiko Hara,Yoichi Ikegami,Osamu Jinnouchi,Abdenour Lounis,Y. Takahashi,Yosuke Takubo,Susumu Terada,Kazunori Hanagaki,N. Kimura,K. Nagai,Itsuo Nakano,Ryuichi Takashima,Junji Tojo,Kohei Yorita +25 more
TL;DR: In this article, the authors developed highly radiation-tolerant n + -in-p planar pixel sensors for use in the high-luminosity LHC, using various combinations of the bias structures (punch-through or polysilicon resistor), isolation structures (P-stop or p-spray), and thickness ( 320 μ m or 150 μ m ).
Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation
S. Mitsui,Yoshinobu Unno,Yoichi Ikegami,Yosuke Takubo,Susumu Terada,Kazuhiko Hara,Y. Takahashi,Osamu Jinnouchi,Ryo Nagai,T. Kishida,Kohei Yorita,Kazunori Hanagaki,Ryuichi Takashima,S. Kamada,Kazuhisa Yamamura +14 more
TL;DR: In this paper, various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition in planar geometry silicon pixel and strip sensors.
Beam test of novel n-in-p strip sensors for high radiation environment
T. Kubota,T. Kishida,Osamu Jinnouchi,Yoichi Ikegami,Yoshinobu Unno,Susumu Terada,S. Mitsui,Atsushi Tamii,T. Aoi,Kazunori Hanagaki,Kazuhiko Hara,N. Kimura,Ryuichi Takashima,Yosuke Takubo,Junji Tojo,K. Nagai,Itsuo Nakano,Kohei Yorita +17 more
TL;DR: In this paper, the results of measurements with 392 MeV kinetic energy proton beam at RCNP in December 2011 were reported with a new DAQ system consisting of an universal read-out board (SEABAS) and beam tracking telescopes whose spacial resolution is better than 5 μ m.
TCAD simulations of silicon strip and pixel sensor optimization
Yoshinobu Unno,Yoichi Ikegami,Kazuhisa Yamamura,Susumu Terada,Ryo Nagai,Osamu Jinnouchi,S. Kamada,Y. Takahashi,Yosuke Takubo,T. Kishida,Kazuhiko Hara,S. Mitsui +11 more
- 27 Jun 2012
TL;DR: In this article, the authors used a TCAD device simulator to develop a highly radiation-tolerant n-in-p silicon strip and pixel sensors, both of which can operate at a very high voltage of up to 1000 V.