T. Junno
Lund University
20 Papers
391 Citations
T. Junno is an academic researcher from Lund University. The author has contributed to research in topics: Coulomb blockade & Quantum dot. The author has an hindex of 10, co-authored 20 publications.
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Papers
Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
TL;DR: In this article, the formation of self-assembled InAs and InAs x P 1−x dots on InP has been studied, in particular with deposition conditions under which mainly coherent dots are developed.
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Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope
TL;DR: In this article, a technique for the fabrication of lateral nanometer-scale devices is described, in which individual metallic nanoparticles are imaged, selected and manipulated into a gap between two electrical leads with the tip of an atomic force microscope.
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Contact mode atomic force microscopy imaging of nanometer‐sized particles
TL;DR: In this paper, a sample preparation technique for SPM overcomes the problems of probe-induced particle movement during scanning and is proposed as a method to "freeze" artificial nanostructures produced by manipulation of particles with the AFM probe.
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A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of inas and inp islands on (001) gap
TL;DR: In this article, the formation of strained InAs and InP island structures on GaP surfaces grown by chemical beam epitaxy was studied and atomic force microscopy studies of these structures were presented and the optical properties were discussed.
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Single-electron devices via controlled assembly of designed nanoparticles
T. Junno,Martin Magnusson,S.-B. Carlsson,Knut Deppert,Jan Olle Malm,Lars Montelius,Lars Samuelson +6 more
TL;DR: In this article, an aerosol-based nanoparticle fabrication method was used to construct coulomb blockade devices and showed that they operate at temperatures above 150K, which is the state-of-the-art performance for a single-electron transistors.
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