T. Freudenberg
Dresden University of Technology
4 Papers
92 Citations
T. Freudenberg is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 4, co-authored 4 publications.
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Papers
Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition
E. Backen,Silvia Haindl,T. Niemeier,T. Freudenberg,J. Werner,Günter Behr,Ludwig Schultz,B. Holzapfel +7 more
TL;DR: In this article, LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric L 1 -Fx polycrystalline targets with fluorine concentrations up to x = 025 by PLD.
92
BaHfO3 artificial pinning centres in TFA-MOD-derived YBCO and GdBCO thin films
Manuela Erbe,Jens Hänisch,Ruben Hühne,T. Freudenberg,Anke Kirchner,Leopoldo Molina-Luna,Leopoldo Molina-Luna,Christian Damm,G. Van Tendeloo,Stefan Kaskel,Ludwig Schultz,Bernhard Holzapfel,Bernhard Holzapfel +12 more
TL;DR: In this paper, the authors investigated the growth of REBCO thin films containing nanometre-scale BaHfO3 (BHO) particles as pinning centres for magnetic flux lines, with emphasis on the influence of crystallization temperature and substrate on the microstructure and superconductivity.
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Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition
E. Backen,Silvia Haindl,T. Niemeier,Ruben Hühne,T. Freudenberg,J. Werner,Günter Behr,Ludwig Schultz,Bernhard Holzapfel +8 more
TL;DR: In this article, LaFeAsO1−xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFAsO 1−x Fx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD).
Artificial pinning centres in YBCO thin films induced by substrate decoration with gas-phase-prepared Y2O3 nanoparticles
M Sparing,E. Backen,T. Freudenberg,Ruben Hühne,Bernd Rellinghaus,Ludwig Schultz,B. Holzapfel +6 more
TL;DR: In this paper, Y2O3 nanoparticles prepared by an inert gas phase condensation process were used to introduce artificial pinning centers in YBa2Cu3O7−δ thin films.