This work shows a new methodology which automates the necessary links between technology computer aided design (TCAD) and the semiconductor manufacturing environment to a high extent Initially a short overview of a typical chain of processes during the fabrication of an integrated circuit is given Furthermore an overview on the relations to the respective simulator tools is given The interfaces between the fabrication process and simulation are identified and the detailed structure of the interfaces is outlined A comprehensive overview over the interactions in this integrated system is given as well Finally the strengths of such a structured and integrated approach are demonstrated with a case in a real semiconductor fabrication environment

TCAD as an integral part of the semiconductor manufacturing environment

The impact of the cathode geometry on conduction and switching properties of high voltage trench gate IGBTs is analysed using mixed mode two-dimensional device and circuit simulation tools. The most effective means to minimize conduction losses by injection enhancement at the cathode is the reduction of the width of the mesa containing n/sup +/ electron emitters and the MOS channel regions. As compared to planar IGBTs, the improvement is most pronounced at higher operating temperatures. If low short circuit current densities are of concern, optimized trench gate geometries also require wide trenches. Trading off conduction losses against turn-off losses, trench gate IGBTs generate approximately 30 to 40% less turn-off losses as planar IGBTs with identical on-state voltage.

On-state and short circuit behaviour of high voltage trench gate IGBTs in comparison with planar IGBTs

The impact of the injection efficiency of unshorted anode p/sup +/emitters on the static and dynamic electrical characteristics of high voltage non-punchthrough IGBTs is analysed using mixed mode two-dimensional device and circuit simulation tools. The results are compared to IGBT device structures with shorted anodes. IGBTs with high and low efficiency anode emitters can be designed to have the same conduction losses despite major differences in the p/sup +/emitter doping profiles and the carrier lifetime. Turn-off losses are in general higher for IGBTs with homogeneous low efficiency emitters. Pushing the trade-off between conduction and turn-off losses to the level set by anode shorted IGBTs is also feasible for homogeneous, low efficiency p/sup +/emitter devices, though it requires approaching the technological limits of injection efficiency and carrier lifetime.

A comparison of emitter concepts for high voltage IGBTs

An insulated-gate controlled thyristor is presented which has a saturating on-state current characteristic and a stable homogeneous current distribution during turn-on and turn-off. The design of the device and a proposed fabrication-process is discussed. The new device has the robust qualities of the IGBT (current saturation, homogeneous current distribution, insulated gate control), and the four-layer thyristor structure allows for a strong reduction in losses compared to the IGBT. A comparison by simulation for high-voltage devices shows that the losses can be reduced by a factor of 2-3 at 3 kV switching and by a factor of 4 at 6 kV switching, as compared to an optimized planar IGBT structure. We also show simulations comparing the stability of these devices against dynamic avalanche-induced current filamentation instabilities.

A filamentation-free insulated-gate controlled thyristor and comparisons to the IGBT

After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D device and circuit simulation tools. The focus of this comparative study is put on the controllability of current and voltage transients mandatory for device protection in unsnubbered circuits. This goal is easily met with the IGBT coupling feedback into the gate; MCTs enter oscillatory modes under such conditions and may eventually be destroyed.

On the suitability of BiMOS high power devices in intelligent, snubberless power conditioning circuits

The simulation of power semiconductor devices is faced with several problems that are not usually found in VLSI device modeling: the huge and often complicated structures, the interaction with external circuit environment, the effects of surface phenomena, etc The large variety of device structures and the lack of compact circuit models makes TCAD very important for the design and optimization of these devices >

TCAD in power device design and optimization

This paper will provide an example for improved technology understanding through a combination of simulation and measurements. Sample mispreparations and design errors could be detected very fast with process simulation, an extremly helpful tool to correlate physical and electrical measurements.

/pdf/improved-technology-understanding-through-using-process-w40dqxyuvg.pdf

Improved Technology Understanding through Using Process Simulation and Measurements

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TCAD in power device design and optimization

Improved Technology Understanding through Using Process Simulation and Measurements