Sylvain Feruglio
University of Paris
31 Papers
108 Citations
Sylvain Feruglio is an academic researcher from University of Paris. The author has contributed to research in topics: CMOS & Photodetector. The author has an hindex of 6, co-authored 30 publications. Previous affiliations of Sylvain Feruglio include Pierre-and-Marie-Curie University & Centre national de la recherche scientifique.
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Papers
A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
TL;DR: A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes and can be operated as a photodiode with improved performance and wavelength-sensitive response.
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A CMOS Buried Quad p-n Junction Photodetector Model
Sylvain Feruglio,Thierry Courcier,Olivier Tsiakaka,Armine Karami,Annick Alexandre-Gauthier,Olivier Romain,Vincent Aimez,Paul G. Charette,Patrick Pittet,Guo-Neng Lu +9 more
TL;DR: In this paper, the authors proposed a SPICE-like model, based on the physical properties of the device structure, which could be used for rapid and reliable design of system on chip, integrating the BQJ sensor, and its signal processing.
FPGA implementation of reconfigurable ADPLL network for distributed clock generation
Chuan Shan,Eldar Zianbetov,M. Javidan,Francois Anceau,M. Terosiet,Sylvain Feruglio,Dimitri Galayko,Olivier Romain,E. Colinet,Jerome Juillard +9 more
- 12 Dec 2011
TL;DR: An FPGA platform for the design and study of network of coupled All-Digital Phase Locked Loops (ADPLLs), destined for clock generation in large synchronous System on Chip (SoC).
Exact noise analysis of a CMOS BDJ APS
Sylvain Feruglio,G. Vasilescu,G. Alquie,V.F. Hanna +3 more
- 23 May 2005
TL;DR: An exact noise analysis of CMOS BDJ APS in charge storage mode during both reset and integration phases is presented, taking into account the non-linearity of junction capacitances, which yields more realistic results.
9
Dark Current and Signal-to-Noise Ratio in BDJ Image Sensors
TL;DR: Analytical expressions of dark currents and equivalent noise generators of a CMOS color image sensor are presented, and the signal-to-noise ratio (SNR) at both outputs is evaluated.
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