In a display apparatus and a driving method thereof, a detector determines whether a timing controller is operated in a three-dimensional (3D) mode or a two-dimensional (2D) mode to output a first or second mode signal according to a result of the determination. A compensator compensates for a gamma value of a 3D image to be increased in response to a first mode signal when the 2D mode is converted to the 3D mode and decreases an increased gamma value to a gamma value for a 2D image in response to a second mode signal when the 3D mode is converted to the 2D mode.

Display apparatus and method of driving the same

The aim of the present study is to investigate the usage of Erbium Oxide ( $\text {Er}_2$ $\text {O}_3$ ) as a gate dielectric in MOS-based radiation sensors. $\text {Er}_2$ $\text {O}_3$ thin films were deposited on a p-type Si (100) substrate via RF magnetron sputtering and were annealed at 500° C under $\text {N}_2$ ambient. The structural properties of the $\text {Er}_2$ $\text {O}_3$ thin films were determined via XRD, FTIR, and AFM analyses. The Erbium silicate formation was not observed in the XRD and FTIR spectra. The roughness root-mean-square was measured as 16.4 nm by the AFM analysis. Following the description of the film, the $\text {Er}_2$ $\text {O}_3$ MOS capacitors were fabricated and irradiated by a $^{60}\hbox{Co}$ radioactive source in different doses varying from 4 Gy to 76 Gy. The capacitance–voltage (C-V) curves shifted to the right side compared to the ideal one in the dose range of 4–16 Gy and to the left side from 16 Gy to 76 Gy. The oxide trapped charge density increased with an increasing irradiation dose. A significant variation in the interface states densities was not observed, the value of which always remained in the order of $10^{10} $ $\text {eV cm}^{-2}$ in the studied dose range. Based on these results, it can be said that gamma radiation does not cause a significant deterioration during irradiation. The calibration curve of the capacitor was obtained from the flat band voltage shifts depending on the gamma dose. Some electrical parameters, such as the barrier height and acceptor concentration, were investigated depending on the gamma dose. The sensitivity of the capacitor was determined to be 107 mV/Gy for the dose range of 4–16 Gy and 61 mV/Gy for the dose range of 16–76. These results showed that the $\text {Er}_2$ $\text {O}_3$ MOS capacitor was more sensitive to the gamma radiation compared to the $\text {SiO}_{2}$ and $\text {Sm}_2$ $\text {O}_3$ -based capacitors.

Evaluation of Radiation Sensor Aspects of $\text{Er}_2$ $\text{O}_3$ MOS Capacitors under Zero Gate Bias

A memory including a first cell block comprising a plurality of first word line groups, and one or more first redundancy word line groups each corresponding to one hit signal of a plurality of hit signals; a second cell block comprising a plurality of second word line groups, and one or more second redundancy word line groups each corresponding to one hit signal of the plurality of hit signals; and a control unit suitable for selecting a cell block and a word line in response to a first input address and refreshing a selected word line based on an input address inputted after the first input address, while refreshing one or more adjacent word lines adjacent to a first selected word line, which is selected by the first input address, in response to the first input address and the hit signals when the first selected word line is adjacent to a redundancy word line, wherein the first input address is first inputted in a target refresh section.

Memory and memory system including the same

The unique physical, chemical, and electronic properties of rare earth oxides have been of immense interest to replace SiO2 as a dielectric material in metal–oxide–semiconductor (MOS)-based sensors applications to accurately measure the radiation dosage and increase sensor sensitivities in as diverse applications as space radiation, nuclear physics, medical diagnostics, radiation cancer therapy, and personal dosimetry devices. Hence, the electrical characteristics of oxides prior to and after irradiation of MOS-based devices are needed since they are the backbone of the devices such as MOSFETs and ICs. In addition, an understanding of the behaviour of high-k dielectric oxides in an MOS configuration is necessary since the radiation-induced damage occurs in the bulk oxide film and/or near the oxide–semiconductor interface resulting in creation of lattice defects. Hence, MOS structures with the rare earth oxides of Er2O3, Gd2O3, Yb2O3, and a transition metal oxide of HfO2 were produced by RF magnetron sputtering to determine (a) the structure of the films, (b) dielectric constants, (c) capacitance versus voltage behaviour of Er2O3, Gd2O3, Yb2O3, and HfO2 prior to and after irradiation of the devices in the dose range of 0–76 Gy. The experimental results were analysed with a theoretical framework on the energy band diagram and the radiation effects on the electrical characteristics of the MOS capacitors. The characteristics of the devices were evaluated by using effective oxide charge density (
$$ Q_{\text{EFF}} $$

), variation in the oxide trapped charge density (
$$ \Delta N_{\text{ox}} $$

), and interface trapped charge density (
$$ \Delta N_{\text{it}} $$

). In addition, barrier height (
$$ \phi_{\text{b}} $$

), image force barrier lowering (
$$ \Delta \phi_{\text{b}} $$

), acceptor concentration (
$$ N_{\text{a}} $$

) were calculated before and after irradiation and examined the nature of interface states. The radiation responses of the Er2O3 and HfO2 MOS capacitors did not show a stable behaviour with an increase in radiation dose due to possible neutral electron trap centres. Contrary to expectations, we infer that more negative charges are trapped in Gd2O3-based device than positive charges with an increase in radiation dose. The C–V curves of the Yb2O3 MOS capacitor shifted in the same direction at both 100 kHz and 1 MHz, and as expected, positive charge traps in the structure are more efficient than negative charges. The observed sensitivities of Yb2O3 MOS capacitors are 4–7 times higher than those of SiO2, and the sensitivities of the Yb2O3 MOS capacitors with a total radiation dose of 70 Gy were found to be around 28.08 mV/Gy at both 100 kHZ and 1 MHz frequencies. The Yb2O3 appears to be a promising dielectric candidate for developing a new generation of radiation sensors with an excellent interface quality when compared to rare earth mixed oxides such as silicates, transition metal oxides, and the silicates based on transition metals, Al2O3, and BiFeO3. Our review of the literature suggests that while the radiation damage has been assessed comprehensively based on the C–V characteristics, microstructural characterization of the irradiated films and their interfaces is lacking even though the quality of oxide/Si interface is the most important feature of the devices. The electrical data should be correlated with the inferences from XPS, AFM, TEM, XRD, and other techniques. Further progress requires selection and validation of material properties based on theoretical calculations and predications, utilization of diverse thin film processing and characterization techniques, determining the effect of thickness on the properties of MOS capacitors, a thorough understanding of the interfaces, effect of frequency on the MOS capacitors and the interface characteristics, effect of radiation on the physical, interfacial, and electrical characteristics of MOS capacitors, and preparation and characterization of sensors based on thin films of novel mixed oxides and silicates of different chemistries.

Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 1011 cm−2 eV−1 was observed with improving the crystalline quality.

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

A semiconductor memory device includes a memory bank including a plurality of word lines, and a refresh operation control unit suitable for performing a first refresh operation for a first adjacent word line group of a target word line of the plurality of word lines, and performing a second refresh operation for a second adjacent word line group of the target word line after the first refresh operation, in response to a smart refresh command.

Semiconductor memory device and refresh control method thereof

An internal voltage generation device includes a plurality of output nodes; a bit line precharge voltage generation unit for generating a bit line precharge voltage; a first voltage drop unit for transferring the bit line precharge voltage to a first output node after decreasing the bit line precharge voltage by a first voltage drop amount in response to a test mode signal; and a second voltage drop unit for transferring the bit line precharge voltage to a second output node after decreasing the bit line precharge voltage by a second voltage drop amount in response to the test mode signal, wherein the second voltage drop amount is greater than the first voltage drop amount.

Internal voltage generator

A semiconductor memory device which includes: a voltage supplying unit for outputting a power source voltage as a driving source signal during a predetermined time, and then outputting a high voltage as the driving source signal in response to a driving control signal activated in response to an address signal; and a word line control unit for activating a word line at a voltage level of the driving source signal in response to the driving control signal.

Semiconductor memory device for reducing power consumption

A fuse circuit includes a fuse driving unit, a separation/connection unit, a voltage equalization unit, and a latching unit. The fuse driving unit is configured to drive an output terminal in response to a fuse reset signal, depending on data programmed in a fuse. The separation/connection unit is disposed between the fuse and the output terminal and configured to separate or connect the fuse from or to the output terminal in response to a control signal. The voltage equalization unit is configured to equalize both ends of the fuse to the same voltage in response to the control signal. The latching unit is configured to latch and output the output terminal driven by the fuse driving unit.

Fuse circuit and repair control circuit using the same

A memory includes a first cell block comprising a plurality of first word lines and one or more first redundancy word lines for replacing at least one of the plurality of first word lines; a second cell block comprising a plurality of second word lines and one or more second redundancy word lines for replacing at least one of the plurality of second word lines; and a control unit suitable for sequentially receiving one or more input addresses, during a target refresh section, selecting one of the first cell block and the second cell block and a word line included in the selected cell block in response to a first input address, and activating one or more adjacent word lines adjacent to the selected word line, which is selected based on the first input address, when the selected word line is adjacent to the redundancy word line, wherein the adjacent word lines comprise the redundancy word line.

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Sung-Soo Chi

Author Tools

Chat about Author