Sung Pil Ryu
LG Display
10 Papers
3 Citations
Sung Pil Ryu is an academic researcher from LG Display. The author has contributed to research in topics: Layer (electronics) & Oxide. The author has an hindex of 2, co-authored 10 publications. Previous affiliations of Sung Pil Ryu include Yonsei University.
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Papers
Air-like plasmonics with ultralow-refractive-index silica aerogels.
Yeonhong Kim,Seunghwa Baek,Prince Gupta,Changwook Kim,Kiseok Chang,Sung Pil Ryu,Han-Saem Kang,Wook Sung Kim,Jae Min Myoung,Wounjhang Park,Kyoungsik Kim +10 more
TL;DR: The near-field due to excitation of the surface plasmon polaritons is observed to be more confined and to penetrate deeper into the sensing medium when a low-index substrate is used.
Patent
Phase shifter comprising dgs and radio communication module comprising same
Byung-Wook Min,Hoon Bae Kim,Sung Eun Kim,Moon Jeong Min,Su Seok Choi,Sung Pil Ryu,Jung Jihwan,Kiseok Chang +7 more
- 23 Oct 2018
TL;DR: In this paper, a phase shifter comprising a defected ground structure (DGS) and a radio communication module comprising the same was presented. But the phase shifters were not considered in this paper.
2
Patent
Oxide semiconductor phototransistor improved in visible light absorption rate and manufacturing method thereof
Hyun Jae Kim,Young Jun Tak,Ju Sung Chung,Moon Jeong Min,Su Seok Choi,Sung Pil Ryu,Jung Jihwan,Kiseok Chang +7 more
- 29 May 2019
TL;DR: In this article, a phototransistor with a defective oxide ray absorption layer introduced to an oxide semiconductor phototelectric layer through a solution process or a defective oxide ray absorption part introduced to the interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, is described.
1
Patent
Oxide semiconductor phototransistor having improved visible light absorption rate, and manufacturing method therefor
Hyun Jae Kim,Young Jun Tak,Ju Sung Chung,Moon Jeong Min,Su Seok Choi,Sung Pil Ryu,Jung Jihwan,Kiseok Chang +7 more
- 23 May 2019
TL;DR: In this paper, a phototransistor with a defective oxide ray absorption layer introduced to the interface between a gate insulation film and an oxide semiconductor layer through interface control is presented.
Patent
Highly sensitive flow sensor
Young Cheol Chae,Kiseok Chang,Sangwoo Lee,Sung Pil Ryu,Jong Hyun Ahn,Yong June Lee +5 more
- 16 May 2019
TL;DR: In this article, a flow sensor consisting of first and second heaters which are disposed in an active layer formed on a silicon layer while being spaced apart from each other, so as to generate heat, is presented.