Increasing concerns about the atmospheric CO2 concentration and its impact on the environment are motivating researchers to discover new materials and technologies for efficient CO2 capture and conversion. Here, we report a study of the adsorption of CO2, CH4, and H2 on boron nitride (BN) nanosheets and nanotubes (NTs) with different charge states. The results show that the process of CO2 capture/release can be simply controlled by switching on/off the charges carried by BN nanomaterials. CO2 molecules form weak interactions with uncharged BN nanomaterials and are weakly adsorbed. When extra electrons are introduced to these nanomaterials (i.e., when they are negatively charged), CO2 molecules become tightly bound and strongly adsorbed. Once the electrons are removed, CO2 molecules spontaneously desorb from BN absorbents. In addition, these negatively charged BN nanosorbents show high selectivity for separating CO2 from its mixtures with CH4 and/or H2. Our study demonstrates that BN nanomaterials are excellent absorbents for controllable, highly selective, and reversible capture and release of CO2. In addition, the charge density applied in this study is of the order of 1013 cm–2 of BN nanomaterials and can be easily realized experimentally.

Charge-controlled switchable CO2 capture on boron nitride nanomaterials

Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h‐BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h‐BN have expanded potential applications into emerging electronics and photonics fields. h‐BN shows a very efficient deep‐ultraviolet band‐edge emission despite its indirect‐bandgap nature, as well as stable room‐temperature single‐photon emission over a wide wavelength range, showing a great potential for next‐generation photonics. In addition, h‐BN is extensively being adopted as active media for low‐energy electronics, including nonvolatile resistive switching memory, radio‐frequency devices, and low‐dielectric‐constant materials for next‐generation electronics.

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

A Comprehensive Review on Recent Advances in Two-Dimensional (2D) Hexagonal Boron Nitride

Electrically insulating boron nitride (BN) nanosheets possess thermal conductivity similar to and thermal and chemical stabilities superior to those of electrically conductive graphenes. Currently the production and application of BN nanosheets are rather limited due to the complexity of the BN binary compound growth, as opposed to massive graphene production. Here we have developed the original strategy "biomass-directed on-site synthesis" toward mass production of high-crystal-quality BN nanosheets. The strikingly effective, reliable, and high-throughput (dozens of grams) synthesis is directed by diverse biomass sources through the carbothermal reduction of gaseous boron oxide species. The produced BN nanosheets are single crystalline, laterally large, and atomically thin. Additionally, they assemble themselves into the same macroscopic shapes peculiar to original biomasses. The nanosheets are further utilized for making thermoconductive and electrically insulating epoxy/BN composites with a 14-fold increase in thermal conductivity, which are envisaged to be particularly valuable for future high-performance electronic packaging materials.

Biomass-directed synthesis of 20 g high-quality boron nitride nanosheets for thermoconductive polymeric composites

The innovative application of microwave transduction technology in the field of gas sensors make it possible to develop wireless passive room-temperature gas sensor integrated on wearable device. Herein, the ultra-narrowband microwave filter was designed as microwave transducer device, and the microwave sensing measurements were extended to reflected coefficient. Meanwhile, the SnO 2 /bionic porous (BP) carbon composites based thick film were deposited on the coupled line spacing blank surface via blade coating method. According to the SnO 2 nanoparticles were well distributed on BP carbon with abundant micro pores, the gas adsorption and desorption can be enhanced, and the sensor response signal base on microwave transduction was finally improved. Without the influence of temperature and humility, the proposed SnO 2 /BP carbon microwave gas sensor exhibited excellent NH 3 sensing behavior at room temperature including wide concentration range (10–200 ppm), relatively fast response and recovery rate, superior selectivity, as well as good reversibility and stability. More importantly, the dielectric constant of microwave sensor has been proved strongly correlation with injected ammonia concentration. This work further proves the feasibility and frontier of microwave transduction technology in gas sensor application. • The ultra-narrowband microwave filter was used as microwave gas sensor which can be operating at room temperature. • The SnO 2 /BP carbon composites was synthesized as sensitive material for microwave gas sensor. • The proposed SnO 2 /BP carbon microwave gas sensor exhibited excellent NH 3 sensing behavior at room temperature. • The sensitive materials’ dielectric constant has strongly correlation with NH 3 concentration. 

Microwave gas sensor for detection of ammonia at room-temperature

The capability of hexagonal boron nitride (h-BN) to adsorb gas atoms may stimulate various promising applications in environment remediation and energy storage, while the interactivity with gas molecules yet remains challenging due to its inherent chemical inertness. In this article, we report a feasible and effective route for the scalable synthesis of vertically aligned h-BN nanowalls assisted by reduced graphene oxide (rGO) without metallic catalysts. The average thickness of the fine h-BN nanowalls is few-atomic layers about 3.7 nm, that grow on the large substrate-like flakes transformed from the pristine rGO. The hierarchical h-BN nanowalls exhibit an enhanced gas adsorption performance, not only through physisorption owing to the synergistic combination of different porous geometries, but also through chemisorption via the open edge groups. Moreover, it demonstrates a significantly enhanced adsorption of CO2 over CH4 as compared to the h-BN nanosheets with similar sizes. Density functional theory calculations reveal that the -OH edge groups can effectively increase the adsorption capability towards CO2, accompanied by a shortened adsorption distance when the gas molecule is energetically stabilized. The wetting characteristics of h-BN nanowalls was further examined by contact angle goniometry.

Graphene-facilitated synthesized vertically aligned hexagonal boron nitride nanowalls and their gas adsorption properties.

The invention provides a preparation method of a BN/epoxy resin heat conductive insulation composite material and belongs to the field of preparation of heat conductive insulation composite materials.The method includes: firstly, performing annealing pretreatment to BN powder and then surface modification with a silane coupling agent; then according to certain ratio, filling an epoxy resin matrixwith the modified hexagonal BN micropowder and the modified cubic BN micropowder. The method is simple process, wherein by adding the BN in different appearances, dimensions and phase structures, effective heat conduction channels are formed to finally improve the heat conductivity of the epoxy resin. After modification, the interface combination between the HBN and the resin is strong, wherein the sheet-like HBN and bulk CBN are overlapped in the epoxy resin to form excellent heat conductive network, thus effectively reducing interfacial thermo-resistance. The composite material is beneficial to quick transmission of heat, improves heat conductivity of the epoxy resin, has excellent insulation performance, and is improved in mechanical property.

Preparation method of BN/epoxy resin heat conductive insulation composite material

The invention relates to a boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and a preparation method of the boron-carbon-nitrogen film, and belongs to the technical field of film materials and preparation thereof. The boron-carbon-nitride film is of an amorphous structure containing boron nitride nanocrystals and growing on a silicon substrate. According to the preparation method, boron nitride containing carbon is used as a target material, and the boron-carbon-nitrogen film is prepared in a deposition chamber of a radio frequency magnetron sputtering device,wherein the substrate temperature ranges from room temperature to 600 DEG C, working gases comprise an argon gas and a nitrogen gas, flow rates are 50 sccm and 0-50 sccm respectively, and the workingpressure is 1 to 3 Pa. Ordered and controllable growth of the orientation of boron nitride nanocrystals in a film can be realized by adjusting technological parameters, and the obtained boron-carbon-nitride film has an optical band gap of about 2.7 to 4.5 eV, and has good and adjustable optical properties. The preparation method provided by the invention has the advantages of simple and safe process, mature technology, high sputtering rate, uniform deposition film, controllable size and the like, and is suitable for industrial mass production and promotion.

Boron-carbon-nitrogen film encapsulating highly-oriented boron nitride nanocrystal and preparation method of boron-carbon-nitrogen film

The invention belongs to the field of inorganic nano materials and particularly relates to a graphene-boron nitride nanosheet composite structure and a preparation method thereof. In the structure, the diameter of each boron nitride nanosheet is 20-150 nm, the thickness of each boron nitride nanosheet is 10-60 nm, the diameter of graphene is 4-25 microns, and the boron nitride nanosheets are uniformly distributed on a large-area graphene thin-layer substrate to form the graphene-boron nitride composite structure. The method comprises the steps of fully mixing, grinding, dispersing and vacuum drying a graphene thin layer and boron oxide powder to obtain a precursor; putting the precursor into a tubular furnace, heating the precursor to a specified temperature in an argon atmosphere, introducing ammonia gas for a reaction to obtain a preliminary product, and conducting treatment on the preliminary product to obtain the graphene-boron nitride nanosheet composite structure. According to the method, boron oxide is uniformly distributed on the surface of the graphene by adding a dispersing agent, so that the nucleation points of boron nitride on the graphene substrate are effectively increased. The ammonia gas is used as reactive gas for the high-temperature reaction, no metal catalyst is needed, and the prepared product is purer.

Graphene-boron nitride nanosheet composite structure and preparation method thereof

Belonging to the field of inorganic nano materials, the invention particularly relates to a graphene/boron nitride layered heterostructure and a preparation method thereof. According to the compositeheterostructure provided by the scheme, the surface of graphene is covered with boron nitride, and the transverse length is 30-80 microns. The method includes: sequentially adding a dispersing agent and graphene into deionized water, performing treatment to form a stable dispersion liquid, then adding boron oxide, performing stirring at a certain constant temperature to a thick mud state, coatingthe surface of a corundum boat with the mud, and carrying out vacuum drying to obtain a precursor; and putting the precursor into a vacuum tube furnace, performing continuous heating to a certain temperature in an argon atmosphere, then introducing ammonia gas for reaction to obtain a primary product, and conducting treatment to obtain the layered heterostructure material. The method provided by the invention has simple process and does not need any metal catalyst, the material has high purity and good crystallinity, integrates the excellent properties of graphene and boron nitride, and the method provides a technical scheme for industrial production of two-dimensional materials.

Graphene/boron nitride layered heterostructure and preparation method thereof

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