This paper has presented a comprehensive overview of on-chip antennas, which remain the last bottleneck for achieving true SoC RF solutions. CMOS remains the mainstream IC technology choice but is not well suited for on-chip antennas, requiring the use of innovative design techniques to overcome its shortcomings. Codesign of circuits and antennas provide leverage to the designer to achieve optimum performance. The layout of on-chip antennas is dictated by foundry specific rules whereas characterization of on-chip antennas requires special text fixtures. For future highly integrated SoC solutions, foundries will have to provide special layers for efficient on-chip antenna implementations, as they currently do for on-chip inductors. In many of the emerging applications such as THz communication, implantable systems and energy harvesting, on-chip antennas have shown immense potential and are likely to play a major role in shaping up future communication systems.

The last barrier: on-chip antennas

This paper presents the design, fabrication and “on-wafer” characterization of multi-membrane-supported and polymer-cavity-backed monopole antenna and 2t 1 patch antenna array operating in the 135-GHz frequency range The designs were fabricated on two-layer benzocyclobutene (BCB) material membrane obtained by micromachining of the low resistivity silicon The silicon material is removed underneath the monopole antenna to produce a cavity surrounded by metal and filled with polymer This polymer filled cavity provides a better support to the membrane than conventional air cavity which is extremely important for practical applications In the meantime, the higher synthesized effective dielectric permittivity of the BCB-polymer mixed region than BCB-air mixed one provides the possibility for compact antenna array designs The proposed monopole antenna shows a measured impedance bandwidth from 124 to 136 GHz for |S11| less than -10 dB and maximum measured gain of 674 dBi at 131 GHz; while the 2t1 patch antenna array achieved a measured impedance bandwidth from 1265 to 138 GHz for |S11| less than -10 dB and maximum measured gain of 866 dBi at 130 GHz

135-GHz Micromachined On-Chip Antenna and Antenna Array

In this paper, W-band flip-chip-assembled CMOS chip modules with transition compensation are presented, a three-stage amplifier, a balanced amplifier, and a down-converted Gilbert-cell subharmonic mixer are included in the chip set. The flip-chip process on ceramic integrated passive devices (CIPD) with a bump size of 30 μm × 30 μm × 27 m is developed for millimeter-wave applications. Without the flip-chip transition compensation, the frequency of the return loss of each chip is shifted, which deviates from the bare die measurement results. By applying the compensation network in the transition, the dips of the return loss are tuned back closer to the bare die measurement results. Moreover, a W-band amplifier flip-chip-assembled with a CPW-fed Yagi-Uda antenna on a CIPD and a W-band flip-chip-assembled receiver are presented for SiP integration. The effect of dicing edge variation is also included in the flip-chip model to achieve reasonable agreement between simulated and measured scattering parameters. To the best of our knowledge, this is the first demonstration of a CMOS chip set with flip-chip interconnects in the -band for a system-in-package.

Flip-Chip-Assembled $W$ -Band CMOS Chip Modules on Ceramic Integrated Passive Device With Transition Compensation for Millimeter-Wave System-in-Package Integration

This letter presents a wideband quasi-Yagi antenna fed by a microstrip-to-slotline transition. The transition consists of a microstrip radial stub and slot radial stub, both at 90° but with different radii, to achieve wideband impedance matching. The antenna has a measured fractional bandwidth of approximately 46% (4.64–7.42 GHz) for a −10 dB reflection coefficient and a flat gain of 6.0–6.75 dBi with a front-to-back ratio and cross-polarization level better than 17 and −15 dB, respectively, across the bandwidth. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:150–153, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26504

Wideband quasi‐yagi antenna fed by microstrip‐to‐slotline transition

A wide impedance-bandwidth and gain-bandwidth terahertz (THz) on-chip antenna (OCA) with chip-integrated dielectric resonator (CIDR) backed by a ground plane is proposed in this article. The antenna uses the inherent silicon substrate in complementary metal–oxide–semiconductor (CMOS) technologies as a rectangular dielectric resonator (DR), that is, the CIDR. This CIDR can be seen as a standard dielectric resonator antenna (DRA) or a magnetic wall cavity with in-phase reflected waves from the ground. A versatile comb-shaped dipole antenna is designed above the silicon CIDR, functioning both as a feeder for the DRA and an independent radiator. With the proper design of the CIDR and the dipole, multiple higher order DR modes and the cavity mode are simultaneously excited, namely, hybrid DR–cavity modes. The hybrid modes greatly expand the bandwidth and improve the gain. Simulations show that the −10 dB impedance bandwidth and 3 dB gain bandwidth are 50% and 34.5%, respectively, while a peak gain of 6.5 dBi is achieved at 305 GHz. For validation, the antenna is fabricated using the Taiwan Semiconductor Manufacturing (TSMC) 65 nm CMOS technology and tested by dedicated THz measurement setups. The fabricated sample shows a peak gain of 8.6 dBi and a maximum radiation efficiency of 44% at 295 GHz. Meanwhile, low cross-polarization levels and stable patterns are also observed. The features of wide bandwidth, high gain, and low profile make the antenna a good candidate in fully integrated THz transceiver systems. To the best of the authors’ knowledge, this is the widest fully integrated OCA working at THz frequencies.

Wide Impedance-Bandwidth and Gain-Bandwidth Terahertz On-Chip Antenna With Chip-Integrated Dielectric Resonator

A high-performance 94 GHz planar Quasi-Yagi antenna on a GaAs substrate is presented. The antenna is fabricated on a 100 μm GaAs wafer and has dimension of 1.6 × 2.6 mm2. Experimental results show that this antenna covers a wide bandwidth from 91 GHz to 106 GHz, with the return loss of better than −10 dB. An end-fire radiation pattern is formed, a peak gain of 7.1 dBi, and front-to-back ratio of 15 dB at 94 GHz are also achieved. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2396–2400, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24628

A high-performance 94 GHz planar Quasi-Yagi antenna on GaAs substrate

In this work, we fabricated a hyperabrupt varactor diode and W-band waveguide VCO using fabricated varactor diode. With the anode diameter of 90 µm, a maximum reverse breakdown voltage of 40 V at a leakage current of 30 µA, a maximum capacitance of 5.82 pF, and a minimum capacitance of 0.7 pF were obtained, resulting in a C max /C min ratio of 8.31. Fabricated VCO showed an excellent linearity of 1.6 % within 800 MHz. The bandwidth of the VCO was 1.165 GHz from 93.305 GHz to 94.47 GHz, and the output power was from 14.6 dBm to 15.42 dBm.

Fabrication of hyperabrupt GaAs varactor diode for W-band waveguide VCO

We fabricated a compact, 94-GHz log-periodic planar antenna on GaAs substrate. We used millimeter-wave monolithic integrated circuit (MMIC) process technology to fabricate the on-chip antenna. An air-bridge crossover is used to replace the conventional bonded structure for crisscross connection, which is compatible with active devices and circuits. The fabricated antenna chip size is 1.2 times 2.6 mm2 . Measurement results show that this antenna can operate from 87 to 99.5 GHz with its return loss better than -10 dB. At 94 GHz, the log-periodic antenna has a return loss of -11 dB and 4.8 dBi of gain.

94-GHz Log-Periodic Antenna on GaAs Substrate Using Air-Bridge Structure

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A high-performance 94 GHz planar Quasi-Yagi antenna on GaAs substrate

Fabrication of hyperabrupt GaAs varactor diode for W-band waveguide VCO

94-GHz Log-Periodic Antenna on GaAs Substrate Using Air-Bridge Structure