The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor field effect transistor is considered one of the most dramatic advances in materials science since the invention of silicon based transistors. Metal oxides are superior to SiO 2 in terms of their higher dielectric constants that enable the required continuous down-scaling of the electrical thickness of the dielectric layer while providing a physically thicker layer to suppress the quantum mechanical tunneling through the dielectric layer. Over the last decade, hafnium based materials have emerged as the designated dielectrics for future generation of nano-electronics with a gate length less than 45 nm, though there exists no consensus on the exact composition of these materials, as evolving device architectures dictate different considerations when optimizing a gate dielectric material. In addition, the implementation of a non-silicon based gate dielectric means a paradigm shift from diffusion based thermal processes to atomic layer deposition processes. In this report, we review how HfO 2 emerges from all likely candidates to become the new gold standard in the microelectronics industry, its different phases, reported electrical properties, and materials processing techniques. Then we use specific examples to discuss the evolution in designing hafnium based materials, from binary to complex oxides and to non-oxide forms as gate dielectric, metal gates and diffusion barriers. To address the impact of these hafnium based materials, their interfaces with silicon as well as a variety of semiconductors are discussed. Finally, the integration issues are highlighted, including carrier scattering, interface state passivation, phonon engineering, and nano-scale patterning, which are essential to realize future generations of devices using hafnium-based high- k materials.

Development of hafnium based high-k materials—A review

Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more and more interest in the last 20?years as a potential material for applications such as thin-film transistors, light-emitting diodes and gas sensors. At the same time, the increasingly stringent requirements of the microelectronics industry, among other factors, have led to a dramatic increase in the use of atomic layer deposition (ALD) technique in various thin-film applications. During this time, the research on ALD-grown ZnO thin films has developed from relatively simple deposition studies to the fabrication of increasingly intricate nanostructures and an understanding of the factors affecting the fundamental properties of the films. In this review, we give an overview of the current state of ZnO ALD research including the applications that are being considered for ZnO thin films.

https://iopscience.iop.org/article/10.1088/0268-1242/29/4/043001/pdf

Atomic layer deposition of ZnO: a review

We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic, and multiferroic materials. Also, we consider ferrimagnetic oxides in the context of the new, rapidly developing field of negative-index metamaterials. This review is motivated by the recent resurgence of interest in complex oxides owing to their coupling of electrical, magnetic, thermal, mechanical, and optical properties, which make them suitable for a wide variety of applications, including heat, motion, electric, and magnetic sensors; tunable and compact microwave passive components; surface acoustic wave devices; nonlinear optics; and nonvolatile memory, and pave the way for designing multifunctional devices and unique applications in spintronics and negative refraction-index media. For most of the materials treated here, structural and physical propertie...

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Development of effective catalysts for hydrogen generation from sodium borohydride: Ru, Pt, Pd nanoparticles supported on Co3O4

Structural, morphological, electrical and dielectric properties of Mn doped CeO2

Crystalline Er2O3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0nm is 14.4. The leakage current density as small as 1.6×10−4A∕cm2 at a reversed bias voltage of −1V has been measured. Atomically sharp Er2O3∕Si interface, superior electrical properties, and good time stability of the Er2O3 thin film indicate that crystalline Er2O3 thin film can be an ideal candidate of future electronic devices.

/pdf/superior-electrical-properties-of-crystalline-er2o3-films-544y8n35ef.pdf

Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates

The experimental data on band alignments of high-k Er2O3 films epitaxially grown on Si substrates by molecular beam epitaxy are reported By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er2O3 to Si are obtained to be 31±01 and 35±03eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band The energy gap of Er2O3 is determined to be 76±03eV From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics

Band offsets of Er2O3 films epitaxially grown on Si substrates

Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention.

/pdf/atomic-layer-deposition-of-high-density-pt-nanodots-on-al2o3-t77b16jc3v.pdf

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications.

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (Vth), subthreshold swing, ION/IOFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, ~106, and 8.4 cm2/V·s, respectively. A positive Vth shift of 2.25 V is achieved after 1-ms programming at 10 V, whereas a negative Vth shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al2O3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm2/(V · s), 0.42 V dec−1 and 106, respectively. The underlying mechanism was discussed.

https://iopscience.iop.org/article/10.1088/0268-1242/30/1/015003/pdf

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

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