Ion beam induced surface and interface engineering

Au/ZnO/n-Si device was obtained by using atomic layer deposition (ALD) technique, and it was characterized by I–V measurement in a wide temperature from 100 to 380 K with 20 K steps. XRD measurements were performed on ZnO thin film layer, and (002) and (201) peaks were seen in XRD pattern of the film. Surface morphology and cross section of the device were taken by SEM and discussed in the details. Some device parameters such as barrier height, ideality factor, series resistance were calculated by thermionic emission theory (TE), using Cheung’s and Norde’s functions. The Calculation results revealed that all device parameters strongly depended on temperature changing. In addition, interface states (N
 ss
 ) graphs were plotted and discussed according to energy levels and measurement temperatures. It can be concluded that this device can be used in various technological applications in wide range temperatures in industry.

Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current–voltage and capacitance–voltage–frequency measurements under γ irradiation at room temperature. Experimental results have shown that γ radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation.

Gamma irradiation-induced changes at the electrical characteristics of organic-based Schottky structures

Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures

Al/Alq3(organic materials)/p-Si device was fabricated by the use of spin coating technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320 K with 20 K steps. Some device parameters such as ideality factor, barrier height and series resistance values were determined by the use of standard thermionic emission theory and Norde functions, and the values found were compared with other studies. It was seen that all parameters of fabricated device strongly depended on temperature changes. AFM and SEM images were taken for better understanding surface morphology, and addressed in detail. The results of experiments suggest that the fabricated device with Alq3 organic interfacial layer could be used effectively in the temperature-dependent device applications for developing electronic technology.

Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction

The electrical characteristics of swift heavy ion (SHI) irradiated Au/n-Si (1 0 0) structure has been investigated in a wide temperature range (50–300 K). The forward bias current–voltage ( I – V ) measurements have been used to extract the diode parameters as a function of temperature. The Zero-bias Schottky barrier height decreases with decreasing temperature. However, the flat-band barrier height is almost independent of the temperature. These results are interpreted using the models of Fermi level pinning. The behavior of Schottky diode parameters is explained by taking into account the role of the irradiation induced defects at Au/n-Si (1 0 0) interface.

Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

We have devised an experimental method and apparatus for the simultaneous nondestructive determination of the absolute ion number, ion kinetic energy, and length of bunches of charged particles. We have built and operated a corresponding electronic detector that is based on induced charges and their subsequent low-noise amplification at cryogenic temperatures. We have performed measurements with bunches of low-energy highly charged ions from an electron-beam ion source that show the capability of the methods and their implementation. We discuss requirements for, and applications of, such detectors with a particular view on the obtainable information and their sensitivity.

Single-pass non-destructive electronic detection of charged particles

In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au∕n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ionscm−2. The swift heavy ion irradiation introduces a deep level at Ec−0.32eV. It is found that initially, trap level concentration of the energy level at Ec−0.40eV increases with irradiation up to a fluence value of 1×1010cm−2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm−2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100MeV Si ions on Au∕n-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

The electrical behavior of Au∕n-Si(100) structure, irradiated with 120MeV Ag8+107, has been investigated in a wide temperature range (50–300K). The forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.

Temperature-dependent barrier characteristics of swift heavy ion irradiated Au/n-Si Schottky structure

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