Diamond Wire Sawing of Solar Silicon Wafers: A Sustainable Manufacturing Alternative to Loose Abrasive Slurry Sawing

This letter summarizes research on the characterization of residual stresses and electron-hole lifetimes of polycrystalline silicon sheet for photovoltaic applications. Full-field polariscopy, scanning room temperature photoluminescence, and surface photovoltage are used to characterize the polycrystalline silicon sheet. An orientation dependent stress-optic coefficient has been developed and used to extract the in-plane residual stresses from analysis of transmitted near-infrared light. The characteristics of the spatial distribution and the quantitative correlation between the residual stresses and the electron-hole lifetime are presented.

Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime

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Study of stress measurement using polariscope

Near Infrared Photoelasticity of Polycrystalline Silicon and it's Relation to In-Plane Residual Stresses

The present invention provides a tool for and method of using an infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin, multi crystalline silicon wafers including in situ measurement of residual stress for large cast wafers. The shear difference method is used to obtain full stress components by integrating the shear stress map from the boundaries. System ambiguity at the boundaries is resolved completely by introducing a new analytical function. A new anisotropic stress optic law is provided, and stress optic coefficients are calibrated for different crystal grain orientations and stress orientations.

Polariscope stress measurement tool and method of use

This paper describes an optical infrared transmission technique to measure the in plane residual stresses in thin single crystal silicon substrates. Fringe multiplication and phase stepping are incorporated to increase the sensitivity of the stress measurement. The measurement is full field and noncontact, and the data processing is automatic. When the fringe multiplication factor of 11 is employed, the measurement sensitivity of the maximum residual shear stress can be 0.4 MPa (58 psi). Both (100) and (111) silicon samples were investigated with this method.

Nondestructive measurement of in plane residual stresses in thin silicon substrates by infrared transmission

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Nondestructive measurement of in plane residual stresses in thin silicon substrates by infrared transmission