An interferometric modulator manufactured according to a particular set of processing parameters may have a non-zero offset voltage. A process has been developed for modifying the processing parameters to shift the non-zero offset voltage closer to zero. For example, the process may involve identifying a set of processing parameters for manufacturing an interferometric modulator that results in a non-zero offset voltage for the interferometric modulator. The set of processing parameters may then be modified to shift the non-zero offset voltage closer to zero. For example, modifying the set of processing parameters may involve modifying one or more deposition parameters used to make the interferometric modulator, applying a current (e.g., a counteracting current) to the interferometric modulator, and/or annealing the interferometric modulator. Interferometric modulators made according to the set of modified processing parameters may have improved performance and/or simpler drive schemes.

Process for modifying offset voltage characteristics of an interferometric modulator

A light emitting device includes a film lightguide. The lightguide includes a lightguide region and an array of coupling lightguides continuous with the lightguide region, each terminating in a bounding edge and folded such that the bounding edges define a light input surface. A light source emits light into the light input surface. Light propagates within each coupling lightguide to the lightguide region, with light from each coupling lightguide combining with light from one or more other coupling lightguides and totally internally reflecting within the lightguide region. One or more light extraction features frustrate the totally internally reflected light such that light exits the lightguide in a light emitting region. Surface relief features on a surface of a low contact area cover are adjacent to a region of the lightguide with one or more of the surface relief features contacting the lightguide. A method of producing a device is disclosed.

Illumination device comprising a film-based lightguide

A multi-state light modulator comprises a first reflector. A first electrode is positioned at a distance from the first reflector. A second reflector is positioned between the first reflector and the first electrode. The second reflector is movable between an undriven position, a first driven position, and a second driven position, each having a corresponding distance from the first reflector. In one embodiment, the three positions correspond to reflecting white light, being non-reflective, and reflecting a selected color of light. Another embodiment is a method of making the light modulator. Another embodiment is a display including the light modulator.

Method and device for multistate interferometric light modulation

Light in the visible spectrum is modulated using an array of modulation elements, and control circuitry connected to the array for controlling each of the modulation elements independently, each of the modulation elements having a surface which is caused to exhibit a predetermined impedance characteristic to particular frequencies of light. The amplitude of light delivered by each of the modulation elements is controlled independently by pulse code modulation. Each modulation element has a deformable portion held under tensile stress, and the control circuitry controls the deformation of the deformable portion. Each deformable element has a deformation mechanism and an optical portion, the deformation mechanism and the optical portion independently imparting to the element respectively a controlled deformation characteristic and a controlled modulation characteristic. The deformable modulation element may be a non-metal. The elements are made by forming a sandwich of two layers and a sacrificial layer between them, the sacrificial layer having a thickness related to the final cavity dimension, and using water or an oxygen based plasma to remove the sacrificial layer.

Method and device for modulating light

A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.

Manufacturing method of a silicon carbide semiconductor device

A microelectromechanical systems device having an electrical interconnect connected to at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a movable layer of the device. A thin film, particularly formed of molybdenum, is provided underneath the electrical interconnect. The movable layer preferably comprises aluminum.

Mems device and interconnects for same

MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.

MEMS device with integrated optical element

Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Diffusion barrier layer for mems devices

Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same

In certain embodiments, a device is provided including a substrate and a plurality of supports over the substrate. The device may further include a mechanical layer having a movable portion and a stationary portion. The stationary portion may disposed over the supports. In certain embodiments, the device further includes a reflective surface positioned over the substrate and mechanically coupled to the movable portion. The device of certain embodiments further includes at least one movable stop element displaced from and mechanically coupled to the movable portion. In certain embodiments, the at least a portion of the stop element may be positioned over the stationary portion.

Display device with at least one movable stop element

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