A temperature- adjusted spectrometer includes a light source, a temperature sensor and a spectral analyzer. The light source is configured to direct light along a light path through a first lens toward a substrate position in the process chamber; the spectral analyzer is configured to receive light scattered from a material sample in sample area on a substrate located at the substrate position in the process chamber; and the temperature measurement device is configured to measure the temperature of a material sample on a substrate located at the substrate position in the process chamber. Further, the spectrum is corrected by means the measured temperature by a calibration module to provide a temperature - adjusted spectrum.

Temperature-adjusted spectrometer

A housing (100) for mounting a monitoring device (150) in a process chamber. The housing (100) is formed such that it is mountable into the process chamber. It comprises a first opening (110) and a mounting point (140) adapted for mounting a monitoring device (140). The first opening (110) and the mounting point (140) are positioned such that, when the monitoring device (150) is mounted in the housing (100) at the mounting point (140), and when the housing (100) is mounted in the process chamber, during processing, radiation from the process chamber can reach the monitoring device (150) through the first opening (110) and such that the housing (100) protects the monitoring device against contamination or degradation as a result of the process.

Monitoring device in a vacuum environment

Die Erfindung schafft eine mikroelektronische Bauelementanordnung und ein entsprechendes Herstellungsverfahren fur eine mikroelektronische Bauelementanordnung. Die mikroelektronische Bauelementanordnung zum dynamischen Detektieren zumindest eines Gases umfasst einen Durchflusskanal, einen Stromungswiderstand, wobei der Stromungswiderstand eine Eintrittsoffnung des Durchflusskanals bedeckt, zumindest zwei Elektroden, wobei die zumindest zwei Elektroden dazu vorgesehen sind, ein Plasma im Durchflusskanal zu erzeugen, eine Mikropumpe, wobei die zumindest zwei Elektroden zwischen der Mikropumpe und dem Stromungswiderstand angeordnet sind sowie eine Detektionsvorrichtung, wodurch zumindest eine Strahlungsintensitat und/oder zumindest ein Wellenlangenbereich zumindest eines durch das Plasma hindurchtretenden Gases bestimmbar ist, und wobei durch die Mikropumpe ein Unterdruck zwischen der Mikropumpe und dem Stromungswiderstand erzeugbar ist.

Mikroelektronische Bauelementanordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Bauelementanordnung

A method for in situ determination of surface characteristics of conductive targets includes generating a low-pressure plasma in front of a surface of a target, applying a voltage to the surface of the target, orientating at least one light-sensitive detector at an angle θ relative to a perpendicular to the surface of the target, and measuring an intensity of light emitted by electrically neutral atoms generated by conversion from ions which are accelerated out of the low-pressure plasma by the applied voltage toward the surface of the target and subsequently reflected thereon, and which thus exchange suitable charges with the surface to reach electrical neutrality The method additionally includes determining a value curve comprising wavelengths and an intensity associated with each wavelength, of the light which, as a result of Doppler shifts, has a red-shifted wavelength range and a blue-shifted range

Method for determining the surface characteristics of targets

A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.

Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ

Die Erfindung betrifft eine rf-Elektrode fur die Erzeugung eines Plasmas in einer Plasmakammer, gekennzeichnet durch eine optische Durchfuhrung. Die Erfindung betrifft ferner eine Plasmakammer, umfassend eine rf-Elektrode und eine Gegenelektrode mit einem Substrathalter zur Aufnahme eines Substrats, wobei zwischen der rf-Elektrode und der Gegenelektrode ein Hochfrequenzwechselfeld zur Erzeugung des Plasma ausgebildet werden kann. Die Kammer ist gekennzeichnet durch eine rf-Elektrode mit einer optischen Durchfuhrung. Die Erfindung betrifft ferner ein Verfahren zur in situ-Analyse oder in situ-Bearbeitung einer Schicht oder eines Plasmas in einer Plasmakammer, wobei die Schicht auf einer Gegenelektrode angeordnet ist und auf der der Schicht zugewandten Seite eine rf-Elektrode angeordnet ist. Das Verfahren ist gekennzeichnet durch die Wahl einer rf-Elektrode mit einer optischen Durchfuhrung, und durch mindestens einen Schritt, bei dem elektromagnetische Strahlung zum Zweck der Analyse oder der Bearbeitung der Schicht oder des Plasmas durch die optische Durchfuhrung geleitet wird, und durch mindestens einen weiteren Schritt, bei der die gestreute oder emittierte oder reflektierte Strahlung einem Analysegerat zugefuhrt wird.

Elektrode zur erzeugung eines plasmas, plasmakammer mit dieser elektrode und verfahren zur in situ-analyse oder -in situ-bearbeitung einer schicht oder des plasmas

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Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ

Elektrode zur erzeugung eines plasmas, plasmakammer mit dieser elektrode und verfahren zur in situ-analyse oder -in situ-bearbeitung einer schicht oder des plasmas