Sorin Cristoloveanu
Los Angeles Harbor College
694 Papers
4K Citations
Sorin Cristoloveanu is an academic researcher from Los Angeles Harbor College. The author has contributed to research in topics: Silicon on insulator & MOSFET. The author has an hindex of 48, co-authored 689 publications. Previous affiliations of Sorin Cristoloveanu include Commissariat à l'énergie atomique et aux énergies alternatives & STMicroelectronics.
Chat about Author
Papers
Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films
Nasser Hefyene,Sorin Cristoloveanu,Gerard Ghibaudo,Pierre Gentil,Yoshitaka Moriyasu,Takashi Morishita,Masahiro Matsui,Akitaka Yasujima +7 more
TL;DR: In this paper, the transport properties at the Si-Al2O3 interface are probed directly on virgin silicon-on-sapphire (SOS) wafers, once the sapphire substrate has been aggressively thinned down to 30 μm.
20
Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration
Emmanuel Augendre,Loic Sanchez,Lamine Benaissa,Thomas Signamarcheix,Jean-Michel Hartmann,Cyrille Le Royer,Maud Vinet,William Van Den Daele,Jean-Francois Damlencourt,K. Romanjek,A. Pouydebasque,Perrine Batude,Claude Tabone,Frédéric Mazen,Aurélie Tauzin,Nicolas Blanc,Michel Pellat,Jéro^me Dechamp,Marc Zussy,P. Scheiblin,Marie-Anne Jaud,Charlotte Drazek,Cécile Maurois,M. Piccin,Alexandra Abbadie,Fabrice Lallement,Nicolas Daval,Eric Guiot,Arnaud Rigny,Bruno Ghyselen,Konstantin Bourdelle,Fabien Boulanger,Sorin Cristoloveanu,Thierry Billon,Olivier Faynot,Chrystel Deguet,Laurent Clavelier +36 more
- 25 Sep 2009
TL;DR: The recent progress in the fabrication of GeOI substrates and devices is reviewed in this article, where improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance.
20
Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates
J.M. Hartmann,Loic Sanchez,W. Van Den Daele,Alexandra Abbadie,L Baud,R. Truche,Emmanuel Augendre,Laurent Clavelier,Nikolay Cherkashin,Martin Hÿtch,Sorin Cristoloveanu +10 more
TL;DR: In this paper, the authors used double-side polished Si(0,0,1) substrates and grew, by reduced pressure-chemical vapour deposition, Si0.15Ge0.85 virtual substrates (VS) on the front side.
20
Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometry
TL;DR: In this paper, the optical properties of the buried oxide in silicon-on-insulator films synthesized by oxygen implantation are investigated by ellipsometry performed during progressive etching of the structure.
20
Four-Gate Transistor Voltage-Controlled Negative Differential Resistance Device and Related Circuit Applications
K. Akarvardar,Suheng Chen,J. Vandersand,Benjamin J. Blalock,Ronald D. Schrimpf,B. Prothro,Charles L. Britton,Sorin Cristoloveanu,Paulo Gentil,M.M. Mojarradi +9 more
- 01 Oct 2006
TL;DR: In this article, a voltage-controlled negative differential resistance (NDR) device using SOI four-gate transistors (G4-FETs) is presented, and an innovative LC oscillator and Schmitt trigger circuits based on the G4 FET NDR device are experimentally demonstrated.
20