Sorin Cristoloveanu
Los Angeles Harbor College
694 Papers
4K Citations
Sorin Cristoloveanu is an academic researcher from Los Angeles Harbor College. The author has contributed to research in topics: Silicon on insulator & MOSFET. The author has an hindex of 48, co-authored 689 publications. Previous affiliations of Sorin Cristoloveanu include Commissariat à l'énergie atomique et aux énergies alternatives & STMicroelectronics.
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Papers
3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors
TL;DR: In this article, a model is developed in order to obtain analytical expressions of the subthreshold characteristics of advanced Pi-gate FET transistors based on the solution of the 3D Laplace's equation and the potential calculated using the most leaky path approach.
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Mechanical and Electrical Analysis of Strained Liner Effect in 35 nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels
C. Gallon,Claire Fenouillet-Beranger,Stephane Denorme,Frederic Boeuf,Vincent Fiori,Nicolas Loubet,A. Vandooren,T. Kormann,M. Broekaart,Pascal Gouraud,Francois Leverd,G. Imbert,C. Chaton,C. Laviron,L. Gabette,F. Vigilant,Philippe Garnier,H. Bernard,A. Tarnowka,Roland Pantel,F. Pionnier,S. Jullian,Sorin Cristoloveanu,Thomas Skotnicki +23 more
TL;DR: In this article, the effects of a strained contact etch stop layer (CESL) on fully depleted (FD) silicon-on-insulator (SOI) devices with ultra thin silicon channels were investigated.
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Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance.
TL;DR: In this article, the probe-pressure impact on the contact nature, series resistance, and carrier mobility of a pseudo-metal-oxide-semiconductor field effect transistor (Ψ-MOSFET) is investigated.
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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs
Sindhuri Vodapally,Young In Jang,In Man Kang,In-Tak Cho,Jong-Ho Lee,Young Ho Bae,Gerard Ghibaudo,Sorin Cristoloveanu,Ki-Sik Im,Jung-Hee Lee +9 more
TL;DR: In this paper, the authors investigated the low-frequency noise characteristics of AlGaN/GaN FinFETs with omega-gate and combined two-dimensional electron gas (2DEG) and MOS conduction.
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Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current
TL;DR: In this paper, a new device combining a tunneling field effect transistor (TFET) with a heterojunction bipolar transistor (HBT) was proposed and simulated, where the carriers generated in the tunneling junction were used as base current to drive the HBT and obtain a high bipolar current.
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