Hardware security is a major concern for the entire semiconductor ecosystem that accounts for billions of dollars in annual losses. Similarly, information security is a critical need for the rapidly proliferating edge devices that continuously collect and communicate a massive volume of data. While silicon‐based complementary metal‐oxide‐semiconductor technology offers security solutions, these are largely inadequate, inefficient, and often inconclusive, as well as resource intensive in time, energy, and cost, leading to tremendous room for innovation in this field. Furthermore, silicon‐based security primitives have shown vulnerability to machine learning (ML) attacks. In recent years, 2D materials such as graphene and transition metal dichalcogenides have been intensely explored to mitigate these security challenges. In this review, 2D‐materials‐based hardware security solutions such as camouflaging, true random number generation, watermarking, anticounterfeiting, physically unclonable functions, and logic locking of integrated circuits (ICs) are summarized with accompanying discussion on their reliability and resilience to ML attacks. In addition, the role of native defects in 2D materials in developing high entropy hardware security primitives is also examined. Finally, the existing challenges for 2D materials, which must be overcome for large‐scale deployment of 2D ICs to meet the security needs of the semiconductor industry, are discussed.

Hardware and Information Security Primitives Based on 2D Materials and Devices

Abstract Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits. 

/pdf/reconfigurable-signal-modulation-in-a-ferroelectric-tunnel-1fg9jweh.pdf

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Mass spectrometry imaging: new eyes on natural products for drug research and development

Self-Destructive Microchip: Support-Free Energetic Film of BiOBr/Al/Bi2O3 Nanothermites and its Destructive Performance

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where the write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a nonferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state, thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation has been performed on fully depleted silicon-on-insulator (FDSOI) FeFETs integrated on a 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the nonferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths. 

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Existing circuit camouflaging techniques to prevent reverse engineering increase circuit-complexity with significant area, energy, and delay penalty. In this paper, we propose an efficient hardware encryption technique with minimal complexity and overheads based on ferroelectric field-effect transistor (FeFET) active interconnects. By utilizing the threshold voltage programmability of the FeFETs, run-time reconfigurable inverter-buffer logic, utilizing two FeFETs and an inverter, is enabled. Judicious placement of the proposed logic makes it act as a hardware encryption key and enable encoding and decoding of the functional output without affecting the critical path timing delay. Additionally, a peripheral programming scheme for reconfigurable logic by reusing the existing scan chain logic is proposed, obviating the need for specialized programming logic and circuitry for keybit distribution. Our analysis shows an average encryption probability of 97.43% with an increase of 2.24%/ 3.67% delay for the most critical path/ sum of 100 critical paths delay for ISCAS85 benchmarks. 

/pdf/hardware-functional-obfuscation-with-ferroelectric-active-2d7vtrm3.pdf

Hardware functional obfuscation with ferroelectric active interconnects

Many designs have been proposed to improve the sensitivity of ion mobility spectrometry (IMS) by modifying its electric field in recent years. However, most of them have shown severe differences between the theoretical predictions and the experimental results. In this work, the effect of electric field on the drifting process was studied from the perspective of spatial ion density. Theoretical derivation illustrated that the nonuniform electric field has no direct influence on the spatial ion density in free space, and the mean spatial ion density was difficult to increase but easy to decrease when crossing grids. Therefore, to improve the sensitivity, a denser ion swarm should be produced in the reaction zone and dilution should be prevented when crossing the ion shutter. Based on this principle, an optimized design was proposed to improve the sensitivity of IMS equipping a UV radiation ionization source. A denser ion swarm was produced by reducing the electric field strength of the reaction zone, and a tri-grid ion shutter was adopted to realize the anti-dilution function. Experimental results showed an impressive improvement, and the SNR of dimethyl methylphosphonate (DMMP) dimer peak increased by 22.6 times without any loss in the resolving power. 

Spatial ion density change in the electrostatic field and sensitivity improvement of ion mobility spectrometer

Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold voltage manipulation for multi-functional logic with identical layouts has also been introduced for functional obfuscation. All these techniques are implemented at the expense of circuit-complexity and with significant area, energy, and delay penalty. In this paper, we propose an efficient hardware encryption technique with minimal complexity and overheads based on ferroelectric field-effect transistor (FeFET) active interconnects. The active interconnect provides run-time reconfigurable inverter-buffer logic by utilizing the threshold voltage programmability of the FeFETs. Our method utilizes only two FeFETs and an inverter to realize the masking function compared to recent reconfigurable logic gate implementations using several FeFETs and complex differential logic. We fabricate the proposed circuit and demonstrate the functionality. Judicious placement of the proposed logic in the IC makes it acts as a hardware encryption key and enables encoding and decoding of the functional output without affecting the critical path timing delay. Also, we achieve comparable encryption probability with a limited number of encryption units. In addition, we show a peripheral programming scheme for reconfigurable logic by reusing the existing scan chain logic, hence obviating the need for specialized programming logic and circuitry for keybit distribution. Our analysis shows an average encryption probability of 97.43\% with an increase of 2.24\%/ 3.67\% delay for the most critical path/ sum of 100 critical paths delay for ISCAS85 benchmarks.

Hardware Functional Obfuscation With Ferroelectric Active Interconnects.

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Hardware functional obfuscation with ferroelectric active interconnects

Spatial ion density change in the electrostatic field and sensitivity improvement of ion mobility spectrometer

Hardware Functional Obfuscation With Ferroelectric Active Interconnects.