Singh Kanwaljit
Intel
43 Papers
200 Citations
Singh Kanwaljit is an academic researcher from Intel. The author has contributed to research in topics: Quantum dot & Qubit. The author has an hindex of 8, co-authored 43 publications.
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Papers
Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits
L. Petit,J.M. Boter,H. G. J. Eenink,G. Droulers,M. L. V. Tagliaferri,R. Li,David P. Franke,Singh Kanwaljit,James S. Clarke,Raymond N. Schouten,Viatcheslav Dobrovitski,Lieven M. K. Vandersypen,Menno Veldhorst +12 more
TL;DR: A model based on spin-valley mixing is developed and it is found that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively.
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Quantum Transport Properties of Industrial Si 28 / Si O 2 28
D. Sabbagh,Nicole K. Thomas,Jessica M. Torres,R. Pillarisetty,Payam Amin,Hubert C. George,Singh Kanwaljit,A. Budrevich,M. Robinson,D. Merrill,L. Ross,Jeanette M. Roberts,Lester Lampert,L. Massa,S.V. Amitonov,J.M. Boter,G. Droulers,H. G. J. Eenink,M. van Hezel,D. Donelson,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke,Giordano Scappucci +23 more
TL;DR: The structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300mm Si wafers in an industrial CMOS fab were investigated in this article.
Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$.
D. Sabbagh,Nicole K. Thomas,Jessica M. Torres,R. Pillarisetty,Payam Amin,Hubert C. George,Singh Kanwaljit,A. Budrevich,Max Robinson,D. Merrill,L. Ross,J.S. Roberts,Lester Lampert,L. Massa,S.V. Amitonov,J.M. Boter,G. Droulers,H. G. J. Eenink,M. van Hezel,D. Donelson,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke,Giordano Scappucci +23 more
TL;DR: The structural and quantum transport properties of isotopically enriched stacks deposited on 300 mm Si wafers in an industrial CMOS fab were investigated in this paper, where highly uniform films with an isotopic purity greater than 99.92% were obtained with an equivalent oxide thickness of 17 nm.
Patent
Gate arrangements in quantum dot devices
Nicole K. Thomas,James S. Clarke,Willy Rachmady,Ravi Pillarisetty,Hubert C. George,Singh Kanwaljit,Jeanette M. Roberts,David J. Michalak,Roman Caudillo,Zachary R. Yoscovits,Lester Lampert +10 more
- 20 Feb 2018
TL;DR: In this paper, quantum dot devices and related computing devices and methods are disclosed, including a quantum well stack, a gate wall between the first gate and the second gate, the gate wall comprising a first dielectric material and a second dielectrics material different from the first dieellectric materials.
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