One aspect of the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating an array of first elements, each first element conforming to a first geometry; fabricating at least one array of second elements, each second element conforming to a second geometry; wherein fabricating the arrays comprises selecting a defining aspect of each of the first and second geometries based on a defining characteristic of each of the first and second elements; and normalizing differences in an actuation voltage required to actuate each of the first and second elements, wherein the differences are as a result of the selected defining aspect, the defining characteristic of each of the elements being unchanged.

A microelectromechanical systems device and method for fabricating same

Silicon-based MEMS techniques dominate sub-millimeter scale manufacturing, while a myriad of conventional methods exist to produce larger machines measured in centimeters and beyond. So-called mesoscale devices, existing between these length scales, remain difficult to manufacture. We present a versatile fabrication process, loosely based on printed circuit board manufacturing techniques, for creating monolithic, topologically complex, three-dimensional machines in parallel at the millimeter to centimeter scales. The fabrication of a 90?mg flapping wing robotic insect demonstrates the sophistication attainable by these techniques, which are expected to support device manufacturing on an industrial scale.

https://iopscience.iop.org/article/10.1088/0960-1317/22/5/055027/pdf

Monolithic fabrication of millimeter-scale machines

An optical device includes a non-transparent substrate. The optical device further includes a first optical layer which is at least partially transmissive and at least partially reflective to incident light. The optical device further includes a second optical layer which is at least partially reflective to incident light. The second optical layer is spaced from the first optical layer. At least one of the first optical layer and the second optical layer is movable between a first position with a first distance between the first and second optical layers and a second position with a second distance between the first and second optical layers. Movement of the at least one of the first optical layer and the second optical layer between the first and second positions modulates the reflectivity of the device.

Photonic mems and structures

Electrostatic-driven microelectromechanical systems devices, in most cases, consist of couplings of such energy domains as electromechanics, optical electricity, thermoelectricity, and electromagnetism. Their nonlinear working state makes their analysis complex and complicated. This article introduces the physical model of pull-in voltage, dynamic characteristic analysis, air damping effect, reliability, numerical modeling method, and application of electrostatic-driven MEMS devices.

https://www.mdpi.com/1424-8220/10/6/6149/pdf

Review on the Modeling of Electrostatic MEMS

A multi-state light modulator comprises a first reflector. A first electrode is positioned at a distance from the first reflector. A second reflector is positioned between the first reflector and the first electrode. The second reflector is movable between an undriven position, a first driven position, and a second driven position, each having a corresponding distance from the first reflector. In one embodiment, the three positions correspond to reflecting white light, being non-reflective, and reflecting a selected color of light. Another embodiment is a method of making the light modulator. Another embodiment is a display including the light modulator.

Method and device for multistate interferometric light modulation

Reliability testing of flexible printed circuit-based RF MEMS capacitive switches

A novel approach for cost effective fabrication, assembly, and packaging of radio-frequency microelectromechanical systems (RF MEMS) capacitive switches using flexible circuit processing techniques is reported. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton-E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area and gap height of a capacitive shunt switch on coplanar waveguide are 2 /spl times/ 1 mm/sup 2/ and 43 /spl mu/m, respectively. Pull-down voltage is in the range of 90-100 V. In the ON state (up-position), the insertion loss is less than 0.3-0.4 dB up to 30 GHz. In OFF state (down-position), the isolation value is about 15 dB at 12 GHz and increases to 36 dB at 30 GHz. These switches are uniquely suitable for batch integration with printed circuits and antennas on laminate substrates.

Fabrication, assembly, and testing of RF MEMS capacitive switches using flexible printed circuit technology

This paper presents radio frequency microelectromechanical systems (RF-MEMS) capacitive switches fabricated using printed circuit processing techniques. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area of a typical capacitive shunt switch on coplanar waveguide (CPW) is 2 mmtimes1 mm, respectively. A CPW shunt switch with insertion loss 10 dB in the frequency range of 8 to 30 GHz is reported. K-band, Ku-band, and X-band high-isolation CPW shunt switches designed by inductive compensation of the switch down-position capacitance are also presented. Inductance compensation has been implemented by introducing inductive step-in-width junctions in the MEMS switch electrode. The K-band switch provides a maximum isolation value of 54 dB at 18 GHz. For the K-band switch, the insertion loss is less than 0.3-0.4 dB in the frequency range of 1-30 GHz and the isolation values are better than 20 dB in the frequency range of 12 to 30 GHz. The Ku-band switch provides a maximum isolation of 46 dB at 16.5 GHz. For the Ku-band switch, the insertion loss is less than 0.4-0.45 dB in the frequency range of 1-30 GHz and the isolation is greater than 20 dB in the frequency range of 12 to 22 GHz. The X-band switch provides a maximum isolation value of 32 dB at 10.6 GHz. The insertion loss is less than 0.25-0.3 dB in the frequency range of 1-18 GHz and the isolation is better than 20 dB in the frequency range of 8.5 to 13.5 GHz for the X-band switch. The measured typical pull-down voltage is in the range of 100-120 for this type of switches. These switches are uniquely suitable for monolithic integration with printed circuits and antennas on organic laminate substrates

RF-MEMS Capacitive Switches Fabricated Using Printed Circuit Processing Techniques

https://asmedigitalcollection.asme.org/IMECE/proceedings-pdf/doi/10.1115/IMECE2001/MEMS-23907/6794502/757_1_imece2001-mems-23907.pdf

Flexible Circuit-Based RF MEMS Switches

A new type of RF MEMS capacitive switch using polyimide film as the structural membrane layer has been developed. The dimensions of these switches range from a few hundred microns to a few millimeters and are convenient for integration with printed antennas. Fabrication and assembly of the polyimide film based switches are discussed. Electromechanical switch designs with actuation voltages as low as 73 V are presented. RF performance of the shunt-mounted switches on a CPW line has been demonstrated in the L-band with an insertion loss of less than 0.32 dB.

Polyimide film based RF MEMS capacitive switches

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