Besides the excellent high-temperature mechanical properties, Si3N4 and SiC based ceramics containing insulating or electrically conductive phase are attractive for their tunable dielectric propert...

Electromagnetic properties of Si–C–N based ceramics and composites

A gas sensor, comprised of a gas-responsive multiwall carbon nanotube (MWNT)-silicon dioxide (SiO/sub 2/) composite layer deposited on a planar inductor-capacitor resonant circuit is presented here for the monitoring of carbon dioxide (CO/sub 2/), oxygen (O/sub 2/), and ammonia (NH/sub 3/). The absorption of different gases in the MWNT-SiO/sub 2/ layer changes the permittivity and conductivity of the material and consequently alters the resonant frequency of the sensor. By tracking the frequency spectrum of the sensor with a loop antenna, humidity, temperature, as well as CO/sub 2/, O/sub 2/ and NH/sub 3/ concentrations can be determined, enabling applications such as remotely monitoring conditions inside opaque, sealed containers. Experimental results show the sensor response to CO/sub 2/ and O/sub 2/ is both linear and reversible. Both irreversible and reversible responses are observed in response to NH/sub 3/, indicating both physisorption and chemisorption of NH/sub 3/ by the carbon nanotubes. A sensor array, comprised of an uncoated, SiO/sub 2/ coated, and MWNT-SiO/sub 2/ coated sensor, enables CO/sub 2/ measurement to be automatically calibrated for operation in a variable humidity and temperature environment.

A wireless, passive carbon nanotube-based gas sensor

The authors present a new transmission line method for measuring the complex permittivity of dielectric materials using propagation constant measurements. In contrast to previous methods, a network analyzer calibration is unnecessary since calibrated scattering parameters are not required. They use measurements in X-band waveguide to show that this technique compares well with the transmission/reflection and cylindrical cavity methods.

Complex permittivity determination from propagation constant measurements

Charge-carrier recombination dynamics after laser excitation are investigated by time-resolved microwave conductivity (TRMC) measurements of quantum-sized (Q-) TiO_2, Fe^(III)-doped Q-TiO_2, ZnO and CdS, and several commercial bulk-sized TiO2 samples. After pulsed laser excitation of charge carriers, holes that escape recombination react with sorbed trans-decalin within ns while the measured conductivity signal is due to conduction-band electrons remaining in the semiconductor lattice. The charge-carrier recombination lifetime and the interfacial electron-transfer rate constant that are derived from the TRMC measurements correlate with the CW photo-oxidation quantum efficiency obtained for aqueous chloroform in the presence of TiO_2. The quantum efficiencies are 0. 4 % for Q-TiO_2, 1. 6 % for Degussa P25, and 2. 0 % for Fe^(III)-doped Q-TiO_2. The lower quantum efficiencies for Q-TiO_2 are consistent with the relative interfacial electron-transfer rates observed by TRMC for Q-TiO_2 and Degussa P25. The increased quantum efficiencies of Fe^(III)-doped Q-TiO_2 and the observed TRMC decays are consistent with a mechanism involving fast trapping of valence-band holes as Fe^(IV) and inhibition of charge-order recombination.

https://authors.library.caltech.edu/29552/1/MARjcsft94a.pdf

Time-resolved microwave conductivity. Part 1.—TiO2 photoreactivity and size quantization

System-on-chips (SOCs) using ultra deep sub-micron (DSM) technologies and GHz clock frequencies have been predicted by the 1997 SIA Road Map. Recent studies [3,4], as well as experiments reported in this paper, show significant crosstalk effects in long on-chip interconnects of GHz DSM chips. Recognizing the importance of high-speed, reliable interconnects in GHz SOCs, we address in this paper the problem of testing for glitch and delay errors caused by crosstalk in buses and interconnects between components of a SOC.Since it is not possible to explicitly test for all the possible process variations and defects that can lead to crosstalk errors in SOC interconnects, we present an abstract model, Maximum Aggressor (MA) fault model, and its test requirements. The attractiveness of the model is that it can abstract crosstalk defects in interconnects with a linear number of faults, while the corresponding MA tests provide complete coverage for all physical level defects related to cross-coupling capacitance between the interconnects. A SPICE-level fault simulation methodology is presented which allows simulation of a small subset of the potentially exponential number of defects. The simulation methodology also enables validation of the proposed fault model and the resulting test set.

/pdf/fault-modeling-and-simulation-for-crosstalk-in-system-on-3ewy50ggvs.pdf

Fault modeling and simulation for crosstalk in system-on-chip interconnects

http://library.um.ac.id/free-contents/downloadpdf.php/buku/fields-and-waves-in-communication-electronics-simon-ramo-john-r-whinnery-theodore-van-duzer-12962.pdf

Fields and waves in communication electronics / Simon Ramo, John R. Whinnery, Theodore van Duzer

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Fields and waves in communication electronics / Simon Ramo, John R. Whinnery, Theodore van Duzer