This article provides a comprehensive analysis and exploration of a novel design approach for Perovskite Solar cells (PVKSC) that incorporates two absorber layers, with a specific focus on their potential applications in energy generation. This research employs a computational modeling approach to conduct a thorough examination of PVKSCs based on FASnI3/CsSn0.5Ge0.5I3. The primary objective of this study is to examine and choose the appropriate materials for the hole transport layer material (HTLM) and the electron transport layer material (ETLM). Additionally, the research aims to identify the optimal parameters for the active thickness layer, trap concentration, energy bandgap, interface trap concentration, and acceptor concentration for PVKSC. Through the optimization of the device's parameters, notable improvements are observed. The power conversion efficiency (PCE) is enhanced to 33.16 %, while the current density (Jsc) experiences an increase to 31.218 mA/cm2. Additionally, the open circuit voltage rises to 1.185 V, and the fill factor demonstrates improvement, reaching 89.58 %. These advancements are achieved by employing Zn3P2 as the HTLM and SnS2 as the ETLM in the design. This research emphasizes the optimistic prospects of lead-free PVKSC and presents novel opportunities for their advancement and utilization in diverse solar contexts. 

Design and performance evaluation of eco-friendly FASnI3/CsSn0.5Ge0.5I3 based perovskite solar cell with distinct charge transport layer: A computational modeling

Earth-abundant and environmentally friendly semiconductors offer a promising path toward low-cost mass production of solar cells. A critical aspect in exploring new semiconducting materials and demonstrating their enhanced functionality consists in disentangling them from the artifacts of defects. Nanowires are diameter-tailored filamentary structures that tend to be defect-free and thus ideal model systems for a given material. Here, an additional advantage is demostrated, which is the determination of the band structure, by performing high energy and spatial resolution electron energy-loss spectroscopy in aloof and inner beam geometry in a scanning transmission electron microscope. The experimental results are complemented by spectroscopic ellipsometry and are excellently correlated with first principles calculations. This study opens the path for characterizing the band structure of new compounds in a non-destructive and prompt manner, strengthening the route of new materials discovery.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202105426

The Advantage of Nanowire Configuration in Band Structure Determination

Optoelectronic properties of zinc phosphide (Zn 3 P 2 ), a promising photovoltaic absorber, are explored using photoluminescence and terahertz-probe spectroscopy. 

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Carrier Generation and Collection in Zn3p2/Inp Heterojunction Solar Cells

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide Zn3P2 films using molecular beam epitaxy with thicknesses up to 1 µm thickness on InP (100) substrates, as demonstrated by high resolution transmission electron microscopy and x-ray diffraction. We explain the mechanisms by which thick monocrystalline layers can form. We correlate the crystalline quality with the optical properties by photoluminescence at 12 K. Polycrystalline and monocrystalline films exhibit dissimilar photoluminescence below the bandgap at 1.37 and 1.30 eV, respectively. Band edge luminescence at 1.5 eV is only detected for monocrystalline samples. This work establishes a reliable method for fabricating high-quality Zn3P2 thin films that can be employed in next generation photovoltaic applications.

The path towards 1 µm monocrystalline Zn3P2 films on InP: substrate preparation, growth conditions and luminescence properties

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The path towards 1 µm monocrystalline Zn3P2 films on InP: substrate preparation, growth conditions and luminescence properties