We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Physical metallurgy of Ti–Ni-based shape memory alloys

This article reviews the progress of atomic force microscopy in ultrahigh vacuum, starting with its invention and covering most of the recent developments. Today, dynamic force microscopy allows us to image surfaces of conductors and insulators in vacuum with atomic resolution. The most widely used technique for atomic-resolution force microscopy in vacuum is frequency-modulation atomic force microscopy (FM-AFM). This technique, as well as other dynamic methods, is explained in detail in this article. In the last few years many groups have expanded the empirical knowledge and deepened our theoretical understanding of frequency-modulation atomic force microscopy. Consequently spatial resolution and ease of use have been increased dramatically. Vacuum atomic force microscopy opens up new classes of experiments, ranging from imaging of insulators with true atomic resolution to the measurement of forces between individual atoms.

https://hep.physics.utoronto.ca/WilliamTrischuk/courses/phy189/AFM_revmodphys.pdf

Advances in atomic force microscopy

A broad review of recent research work on the preparation and the remarkable properties of intercalation compounds of graphite, covering a wide range of topics from the basic chemistry, physics and materials science to engineering applications.

Intercalation compounds of graphite

The structure factor $S(Q)$ of high purity amorphous Si membranes prepared by ion implantation was measured over an extended $Q$ range ( $0.03\char21{}55{\AA{}}^{\ensuremath{-}1}$). Calculation of the first neighbor shell coordination ( ${C}_{1}$) as a function of maximum $Q$ indicates that measurement of $S(Q)$ out to at least $40{\AA{}}^{\ensuremath{-}1}$ is required to reliably determine the radial distribution function (RDF). A $2%$ change in ${C}_{1}$ and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600 \ifmmode^\circ\else\textdegree\fi{}C, ${C}_{1}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}3.88$, which would explain why amorphous Si is less dense than crystalline Si.

High Resolution Radial Distribution Function of Pure Amorphous Silicon

It is shown that the Cu-O basal plane of YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ can undergo three types of ordering wave instabilities at the k points , or , depending on the values of the effective pair interactions between filled and empty oxygen sites. The instability gives rise to the observed chains of oxygen atoms along either the a or the b axis of the crystals. The and instabilities produce doubling and quadrupling of the unit cell, respectively. Comparison with experiments suggests the necessity for interactions beyond nearest neighbors.

/pdf/stability-analysis-of-special-point-ordering-in-the-basal-4qw7fup7dh.pdf

Stability analysis of special-point ordering in the basal plane of YBa2Cu

We present an x-ray diffraction study of $\mathrm{Y}{\mathrm{Ba}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7\ensuremath{-}\ensuremath{\delta}}$ single crystals. High-resolution scans reveal two orthorhombic phases with different lattice constants but a common orientation indicating a phase separation into phases with $\ensuremath{\delta}\ensuremath{\approx}0.0 \mathrm{and} 0.3$. Thermal expansions of the unit-cell parameters of both phases measured between 10 and 300 K were fit using a quasiharmonic approximation giving a best-fit Debye temperature of 370\ifmmode\pm\else\textpm\fi{}5 K. The measured orthorhombicities were found to change smoothly through the superconducting transition temperature without any anomaly.

Phase constitution and thermal expansion of YBa2Cu3O7- delta single crystals.

Comparison of amorphous and quasicrystalline films of sputtered Al0.72Mn0.22Si0.06.

X-ray evidence on a stage-II potassium-graphite crystal indicates that below the upper critical temperature, ${T}_{U}\ensuremath{\cong}123$ K, the disordered unregistered potassium layers order and rotate with respect to the graphite. We postulate that the alkali ordering is accompanied by both a static displacement and charge-density modulation of the adjacent graphite planes in which the potassium periodicity is impressed. We then make preliminary estimates of these modulation amplitudes. A simple $\stackrel{\ensuremath{\rightarrow}}{\mathrm{k}}$-space geometrical argument relates the rotation angle to the alkali ion size in K, Rb, and Cs compounds, and a universal curve is thereby generated which fits well the available data.

Mass- and charge-density modulation of graphite in potassium-graphite intercalates

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