On September 14, 2015 at 09:50:45 UTC the two detectors of the Laser Interferometer Gravitational-Wave Observatory simultaneously observed a transient gravitational-wave signal. The signal sweeps upwards in frequency from 35 to 250 Hz with a peak gravitational-wave strain of 1.0×10(-21). It matches the waveform predicted by general relativity for the inspiral and merger of a pair of black holes and the ringdown of the resulting single black hole. The signal was observed with a matched-filter signal-to-noise ratio of 24 and a false alarm rate estimated to be less than 1 event per 203,000 years, equivalent to a significance greater than 5.1σ. The source lies at a luminosity distance of 410(-180)(+160)  Mpc corresponding to a redshift z=0.09(-0.04)(+0.03). In the source frame, the initial black hole masses are 36(-4)(+5)M⊙ and 29(-4)(+4)M⊙, and the final black hole mass is 62(-4)(+4)M⊙, with 3.0(-0.5)(+0.5)M⊙c(2) radiated in gravitational waves. All uncertainties define 90% credible intervals. These observations demonstrate the existence of binary stellar-mass black hole systems. This is the first direct detection of gravitational waves and the first observation of a binary black hole merger.

/pdf/the-observation-of-gravitational-waves-from-a-binary-black-58srpupgg9.pdf

The Observation of Gravitational Waves from a Binary Black Hole Merger

In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.

https://iopscience.iop.org/article/10.1088/0953-8984/27/8/083002/pdf

Raman characterization of defects and dopants in graphene

Numerous astrophysical and cosmological observations are best explained by the existence of dark matter, a mass density which interacts only very weakly with visible, baryonic matter. Searching for the extremely weak signals produced by this dark matter strongly motivate the development of new, ultra-sensitive detector technologies. Paradigmatic advances in the control and readout of massive mechanical systems, in both the classical and quantum regimes, have enabled unprecedented levels of sensitivity. In this overview paper, we outline recent ideas in the potential use of a range of solid-state mechanical sensing technologies to aid in the search for dark matter in a number of energy scales and with a variety of coupling mechanisms.

https://iopscience.iop.org/article/10.1088/2058-9565/abcfcd/pdf

Mechanical quantum sensing in the search for dark matter

Raman spectroscopy of twisted bilayer graphene

Raman scattering plays a key role in unraveling the quantum dynamics of graphene, perhaps the most promising material of recent times. It is crucial to correctly interpret the meaning of the spectra. It is therefore very surprising that the widely accepted understanding of Raman scattering, i.e., Kramers–Heisenberg–Dirac theory, has never been applied to graphene. Doing so here, a remarkable mechanism we term“transition sliding” is uncovered, explaining the uncommon brightness of overtones in graphene. Graphene’s dispersive and fixed Raman bands, missing bands, defect density and laser frequency dependence of band intensities, widths of overtone bands, Stokes, anti-Stokes anomalies, and other known properties emerge simply and directly.

Theory of Graphene Raman Scattering

We introduce a passively-aligned, flexure-tuned cavity optomechanical system in which a membrane is positioned microns from one end mirror of a Fabry-Perot optical cavity. By displacing the membrane through gentle flexure of its silicon supporting frame (i.e., to ~80 m radius of curvature (ROC)), we gain access to the full range of available optomechanical couplings, finding also that the optical spectrum exhibits none of the abrupt discontinuities normally found in "membrane-in-the-middle" (MIM) systems. More aggressive flexure (3 m ROC) enables >15 microns membrane travel, milliradian tilt tuning, and a wavelength-scale (1.64 $\pm$ 0.78 microns) membrane-mirror separation. We also provide a complete set of analytical expressions for this system's leading-order dispersive and dissipative optomechanical couplings. Notably, this system can potentially generate orders of magnitude larger linear dissipative or quadratic dispersive strong coupling parameters than is possible with a MIM system. Additionally, it can generate the same purely quadratic dispersive coupling as a MIM system, but with significantly suppressed linear dissipative back-action (and force noise).

Flexure-Tuned Membrane-at-the-Edge Optomechanical System

It is prohibitively expensive to deposit customized dielectric coatings on individual optics One solution is to batch-coat many optics with extra dielectric layers, then remove layers from individual optics as needed Here we present a low-cost, single-step, monitored wet etch technique for reliably removing (or partially removing) individual SiO$_2$ and Ta$_2$O$_5$ dielectric layers, in this case from a high-reflectivity fiber mirror By immersing in acid and monitoring off-band reflected light, we show it is straightforward to iteratively (or continuously) remove six bilayers At each stage, we characterize the coating performance with a Fabry-Perot cavity, observing the expected stepwise decrease in finesse from 92,000$\pm$3,000 to 3,950$\pm$50, finding no evidence of added optical losses The etch also removes the fiber's sidewall coating after a single bilayer, and, after six bilayers, confines the remaining coating to a $\sim$50-$\mu$m-diameter pedestal at the center of the fiber tip Vapor etching above the solution produces a tapered "pool cue" cladding profile, reducing the fiber diameter (nominally 125 $\mu$m) to $\sim$100 $\mu$m at an angle of $\sim$03$^\circ$ near the tip Finally, we note that the data generated by this technique provides a sensitive estimate of the layers' optical depths This technique could be readily adapted to free-space optics and other coatings

Monitored wet-etch removal of individual dielectric layers from high-finesse Bragg mirrors

We demonstrate a high-Q ($>5 \times 10^{6}$) swept-frequency membrane mechanical resonator achieving octave resonance tuning via an integrated heater and an unprecedented acceleration noise floor below 1 $\mu$g Hz$^{-1/2}$ for frequencies above 50 kHz. This device is compatible with established batch fabrication techniques, and its optical readout is compatible with low-coherence light sources (e.g., a monochromatic light-emitting diode). The device can also be mechanically stabilized (or driven) with the same light source via bolometric optomechanics, and we demonstrate laser cooling from room temperature to 10 K. Finally, this method of frequency tuning is well-suited to fundamental studies of mechanical dissipation; in particular, we recover the dissipation spectra of many modes, identifying material damping and coupling to substrate resonances as the dominant loss mechanisms.

Swept-Frequency Drumhead Mechanical Resonators

It is prohibitively expensive to deposit customized dielectric coatings on individual optics. One solution is to batch-coat many optics with extra dielectric layers, then remove layers from individual optics as needed. Here we present a low-cost, single-step, monitored wet etch technique for reliably removing individual SiO2 and Ta2O5 dielectric layers, in this case from a high-reflectivity fiber mirror. By immersing in acid and monitoring off-band reflected light, we show it is straightforward to iteratively (or continuously) remove six bilayers. At each stage, we characterize the coating performance with a Fabry-Perot cavity, observing the expected stepwise decrease in finesse from 92,000 ± 3,000 to 3, 950 ± 50, finding no evidence of added optical losses. The etch also removes the fiber’s sidewall coating after a single bilayer, and, after six bilayers, confines the remaining coating to a 60-µm-diameter pedestal at the center of the fiber tip. Vapor etching above the solution produces a tapered “pool cue” cladding profile, reducing the fiber diameter (nominally 125 µm) to 95 µm at an angle of ∼0.3° near the tip. Finally, we note that the data generated by this technique provides a sensitive estimate of the layers’ optical depths. This technique could be readily adapted to free-space optics and other coatings.

Monitored wet-etch removal of individual dielectric layers from high-finesse Bragg mirrors.

Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D' peak corresponding to a double phonon process involving both an inter- and intra-valley phonon. In order to both eliminate substrate effects and to probe large areas, we undertook to study Raman scattering for large scale chemical vapor deposition (CVD) grown graphene using two different isotopes (C12 and C13) so that we can effectively exclude and subtract the substrate contributions, since a heavier mass downshifts only the vibrational properties, while keeping all other properties the same.

The graphene phonon dispersion with C[sup 12] and C[sup 13] isotopes

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