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Electronic Transport In Mesoscopic Systems

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

/pdf/semiconductor-nanowire-based-superconducting-qubit-1vdl56svlc.pdf

Semiconductor-Nanowire-Based Superconducting Qubit.

We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively shunted single elements behave as transmon circuits with electrically tunable transition frequencies. Two-element circuits also exhibit transmonlike behavior near zero applied flux but behave as flux qubits at half the flux quantum, where nonsinusoidal current-phase relations in the elements produce a double-well Josephson potential. These hybrid Josephson elements are promising for applications requiring microwave superconducting circuits operating in a magnetic field.

/pdf/realization-of-microwave-quantum-circuits-using-hybrid-1g0t296i5s.pdf

Realization of Microwave Quantum Circuits Using Hybrid Superconducting-Semiconducting Nanowire Josephson Elements

Bismuth sulfide (Bi2 S3 ) nanomaterials are emerging as a promising theranostic platform for computed tomography imaging and photothermal therapy of cancer Herein, the photothermal properties of Bi2 S3 nanorods (NRs) were unveiled to intensely correlate to their intrinsic deep-level defects (DLDs) that potentially could work as electron-hole nonradiative recombination centers to promote phonon production, ultimately leading to photothermal performance Bi2 S3 -Au heterojunction NRs were designed to hold more significant DLD properties, exhibiting more potent photothermal performance than Bi2 S3 NRs Under 808 nm laser irradiation, Bi2 S3 -Au NRs could trigger higher cellular heat shock protein 70 expression and more apoptotic cells than Bi2 S3 NRs, and caused severe cell death and tumor growth inhibition, showing great potential for photothermal therapy of cancer guided by computed tomography imaging

Deep-Level Defect Enhanced Photothermal Performance of Bismuth Sulfide-Gold Heterojunction Nanorods for Photothermal Therapy of Cancer Guided by Computed Tomography Imaging.

The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies1 and interqubit coupling strengths2 to the gain of parametric amplifiers3 for quantum-limited readout. The inductance is either set by tailoring the metal oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices with local current-biased flux lines. JJs based on superconductor–semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant that employs locally gated nanowire superconductor–semiconductor JJs for qubit control4,5. Here we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show that 2DEG gatemons meet the requirements6 by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 μs, limited by dielectric loss in the 2DEG substrate. Scalable gate tunable superconducting qubits can be realized using a proximitized InAs two-dimensional electron gas.

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas.

We report conductance and supercurrent of InAs nano wires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15 nm above a local gate electrode. The charge density in the nanowires can be controlled by a small change in the gate voltage. For large negative gate voltages, the number of conducting channels is reduced gradually, and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely.

Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors

We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift-off nanofabrication method to get very short nanowire devices with Ohmic contacts. We observe very high critical currents of up to 800 nA in a wire with a diameter of 80 nm. The current-voltage characteristics of longer and suspended nanowires display either Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.

/pdf/high-critical-current-superconductor-inas-nanowire-ivda6udxd9.pdf

High critical-current superconductor-InAs nanowire-superconductor junctions

We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO2 substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed ove...

Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section

This thesis presents extensive experimental studies of the proximity effect in InAs nanowires connected to superconducting electrodes, radio-frequency single electron transistors based on nanowire heterostructures, and measurement of shot noise in nanowires coupled to superconducting electrodes. We have investigated proximity induced superconductivity in a large number of InAs nanowire devices with a broad range of lengths at different temperatures and magnetic fields. The nanowires are either placed directly on the substrate or suspended above the substrate with local gates. We have measured the main features of the current-voltage characteristics: Josephson current, excess current, sub-gap current and sub-gap features, and compared them with theory. In the shortest length device, L = 30 nm, with very good contact-interface transparencies, we have achieved a record high value of Josephson critical current, 800 nA, an order of magnitude higher than what has been reported by others, and which comes close to the theoretical limit. The sub-gap current exhibits a large number of structures, some of them are subharmonic gap structures that come from multiple Andreev reflections. The other structures, observed in both suspended and non-suspended devices, are independent of either superconducting energy-gap or length of the wire. In gate-controlled suspended devices, the current-voltage characteristics manifest different properties depending on the resistance of the device. By applying gate voltage, in devices of relatively higher resistances, we have been able to tune the conductance from a completely insulating regime, via Coulomb-blockade regime, to a superconducting regime, combining different types of transport in a single device. In devices of intermediate resistances, we have been able to observe a cross over from a typical tunneling transport at large negative voltages, with suppressed sub-gap conductance, and negative excess current to a metallic behavior at positive gate voltages, with enhanced sub-gap conductance and positive excess-current. In suspended devices of short lengths and good ohmic contact-interfaces, for negative gate voltages, the number of conducting channels is reduced gradually and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely. We have also demonstrated a radio-frequency single electron transistor based on suspended InAs/InP nanowire heterostructures. The single electron transistor is defined by introducing two barriers of InP in the middle of an InAs nanowire. The

Charge transport in InAs nanowire devices

This paper systematically reviews the literature on values-based leadership (VBL) theories by analyzing 161 studies published in different peer-review journals from 2000 to 2022. The study first identified the literature on VBL and found that the terms “values-oriented, valuescentered, or value-based” leadership are used interchangeably as a roof term for various theories focusing on the moral, authentic, principled, and ethical dimensions of leadership. The literature on leadership offers different types of leadership theories that constitute VBL, but we focused on six leadership theories that are widely cited as forms of VBL and have a strong theoretical background. The key theoretical components of each theory were then compared to pinpoint how they relate to the other forms of VBL theories. Our results from the comparative analysis revealed that transformational leadership is a broader theory and many of the core dimensions of the other five VBL theories overlap with the essential theoretical components of transformational leadership which raises a question on their distinctiveness as separate theories. Based on our literature review, we offered our conceptualization of VBL to bring more clarity and harmonization to the concept. Finally, we presented a conclusion and forwarded an agenda for future research. Introduction Leadership is one of the most researched areas in organizational studies and leadership researchers are persistently looking at the key constructs of leadership. Hence, today’s leadership theories have evolved over time, and the theory of leadership has been changing from time to time; Grint (2011:13) mentioned that “leadership has been always related to the cultural mores that prevail at the time, and what appears ‘normal’ at one time can often appear extraordinarily naive when considered retrospectively.” Over the last few decades, SIMON TAREKE ABAY ADDIS ABABA, ETHIOPIA JORGE F. S. GOMES LISBON, PORTUGAL ABEBA BEYENE MENGISTU ADDIS ABABA, ETHIOPIA

/pdf/a-comparative-analysis-of-values-based-leadership-theories-a-2jaflpo4.pdf

A Comparative Analysis of Values-Based Leadership Theories: A Review and Future Research Agenda

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