Shuvam Pawar
Indian Institute of Technology Roorkee
12 Papers
18 Citations
Shuvam Pawar is an academic researcher from Indian Institute of Technology Roorkee. The author has contributed to research in topics: Dielectric & Wurtzite crystal structure. The author has an hindex of 6, co-authored 12 publications. Previous affiliations of Shuvam Pawar include National Institute of Technology Agartala & Central Electronics Engineering Research Institute.
Chat about Author
Papers
Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors
TL;DR: In this article, the diameter dependent thermal sensitivity variation trend of Ni/4H-nSiC Schottky barrier diode (SBD) temperature sensors was investigated and an authoritative consequence of the observed increase in thermal sensitivity with the diameter of the fabricated SBDs was found.
53
Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy
TL;DR: In this article, the authors explored the resistive switching response of magnetron sputtered MoS2 thin films sandwiched between a Ni-Mn-In ferromagnetic shape memory alloy (bottom) and copper (top) electrodes.
45
Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications
Shuvam Pawar,Kirandeep Singh,Shubham Sharma,Akhilesh Pandey,Akhilesh Pandey,Shankar Dutta,Davinder Kaur +6 more
TL;DR: In this paper, the effect of bottom electrodes (Al, Pt and Ti) on the texture, piezoelectric characteristics, dielectric properties and leakage current behavior of reactive DC magnetron sputtered AlN thin films was reported.
31
Reusable silicon shadow mask with sub-5 μm gap for low cost patterning
Pankaj B. Agarwal,Shuvam Pawar,Shuvam Pawar,Suman M. Reddy,Suman M. Reddy,Prabhash Mishra,Ajay Agarwal +6 more
TL;DR: In this paper, reusable silicon shadow mask, fabricated using conventional photolithography process has minimum gap size of 1μm to 5μm, has been used to make stable metallic contacts to the objects of few microns size.
18
High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature
TL;DR: In this article, the presence of strong magnetoelectric coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate was explored.
16