The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

/pdf/recent-developments-in-p-type-oxide-semiconductor-materials-4iad1efbja.pdf

Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ∼100 times, field-effect mobility (μlin) by ∼3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based e...

High performance p-type NiOx thin-film transistor by Sn doping

Hydrogels are a class of special materials that contain a large amount of water and behave like rubber. These materials have found broad applications in tissue engineering, cell culturing, regenerative medicine etc. Recently, the exploration of peptide-based supramolecular hydrogels has greatly expanded the repertoire of hydrogels suitable for biomedical applications. However, the mechanical properties of peptide-based hydrogels are intrinsically weak. Therefore, it is crucial to develop methods that can improve the mechanical stability of such peptide-based hydrogels. In this review, we explore the factors that determine or influence the mechanical stability of peptide-based hydrogels and summarize several key elements that may guide scientists to achieve mechanically improved hydrogels. In addition, we exemplified several methods that have been successfully developed to prepare hydrogels with enhanced mechanical stability. These mechanically strong peptide-based hydrogels may find broad applications as novel biomaterials. It is still challenging to engineer hydrogels in order to mimic the mechanical properties of biological tissues. More hydrogel materials with optimal mechanical properties suitable for various types of biological applications will be available in the near future.

Designing the mechanical properties of peptide-based supramolecular hydrogels for biomedical applications

In this letter, we demonstrate a low temperature (≈345 °C) growth method for Cu deficient CuCrO2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 μS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably, despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means that the material can be deposited on flexible substrates. As this is a solution based technique, it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.

/pdf/spray-pyrolysis-growth-of-a-high-figure-of-merit-nano-1x98317m5a.pdf

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

We report a polymer light-emitting diode (PLED) using solution processed tungsten-oxides (WOx). Coating of a thin WOx layer on PEDOT:PSS increases the current efficiency of PLED from 9.11 to 9.90 cd A−1 because of the improved conductivity of the PEDOT:PSS due to the incorporation of WOx. Improvement of the conductivity of PEDOT:PSS promotes hole injection into the emission layer. The lifetime of a PLED with WOx layers on both sides of PEDOT:PSS is 1.8 × 106 h which is around 20 times longer than that of the control device at 1000 cd m−2. The enhanced lifetime is due to the suppression of the indium diffusion from ITO to PEDOT:PSS by WOx and also due to the prevention of acidic damage that can occur to ITO and the organic emission layer by sulfate ions in PEDOT:PSS.

Improving the lifetime of a polymer light-emitting diode by introducing solution processed tungsten-oxide

In order to promote a polymer LED (PLED), we fabricated and introduced an ultrathin nickel oxide (NiO) buffer layer (<10 nm) between the indium tin oxide (ITO) anode and the poly (3, 4-ethylenedioxythiophene) hole injection layer in the PLED. The NiO buffer layer was easily formed on the ITO anode by electron-beam deposition of a nickel (Ni) metal source and an oxygen plasma treatment process. As a result, the PLED device with the NiO buffer layer on its ITO anode had the same turn-on voltage as conventional PLED devices without the NiO buffer layer, and the luminance of the PLED device with the NiO buffer layer was doubled, compared with the conventional PLED devices without the NiO buffer layer. Improvement of the optoelectronic performance of the PLED can be attributed to the increase of the current driven into the diode, resulting from the NiO buffer layer, which can enhance the hole injection and balance the injection of the two types of carriers (holes and electrons). Thus it is an excellent choice to introduce the NiO buffer layer onto the ITO anode of the PLED devices in order to enhance the optoelectronic performance of PLED devices.

Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode.

We report on the fabrication of a 4-channel embedded waveguide array by a develop-free solgel process, adopted for the first time in waveguide fabrication to improve the sidewall roughness and simplify the fabrication procedures. A kind of novel hybrid HfO2/SiO2 solgel material, which can be used to form a crack-free thick film by a single spin-coating, was prepared to construct waveguide core and cladding, whose refractive index can be accurately set by adjusting ultraviolet (UV) exposure time. The average propagation losses of the fabricated single-mode channel waveguides were measured as low as 0.19 ± 0.02 dB/cm and 0.22 ± 0.03 dB/cm at a wavelength of 1.55 ?m for TE and TM polarizations, respectively.

Develop-Free Solgel Fabrication of Low-Loss Embedded Channel Waveguide Array

A new kind of organic-inorganic hybrid HfO2/SiO2 sol-gel material with a large thermo-optic coefficient and a wide linear tunable temperature range has been developed for fabrication of a long period waveguide grating (LPWG) filter, whose parameters were optimized and designed by using finite difference time domain (FDTD) simulations. The LPWG filter, a periodic rectangle-corrugated grating structure, was easily fabricated with soft-lithography technique. At a temperature range from 19°C to 70°C, the fabricated LPWG filter element demonstrated a high temperature sensitivity of about 6.5 nm/°C and a wide linear tunable temperature range of 51°C, so that it can be used as a precise thermometer. Our results are useful for the designs of LPWG filters for the implementation of a wide range of thermo-optic functions.

Novel sol-gel material for fabrication of a long period waveguide grating filter as a precise thermometer

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Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode.

Develop-Free Solgel Fabrication of Low-Loss Embedded Channel Waveguide Array

Novel sol-gel material for fabrication of a long period waveguide grating filter as a precise thermometer