Shotaro Murata
Nagoya Institute of Technology
13 Papers
10 Citations
Shotaro Murata is an academic researcher from Nagoya Institute of Technology. The author has contributed to research in topics: Electric field & Dielectric. The author has an hindex of 2, co-authored 13 publications.
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Papers
Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3
TL;DR: In this article, the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/magnetic floating gate (Fe)/tunnel layer (CeO2)/semiconductor (Si) capacitor were investigated.
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Preparation and Exchange Bias of a Cr2O3/(La0.7Sr0.3)MnO3 Magnetic Hetero Junction
TL;DR: In this article, the magnetic interaction between antiferromagnetic, magnetoelectric Cr2O3 film and ferromagnetic La0.7Sr0.3MnO3 was investigated.
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Preparation and magnetic properties of SrFeO3−x (x = 0.25 ∼ 0.5) using RF magnetron sputtering optimized through sputtering plasma analysis
TL;DR: In this article, the authors investigated the magnetic properties of SrFeO3−x using conventional RF magnetron sputtering and found that the magnetic property change was likely due to the suppression of the oxygen deficiency in the film.
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Influence of an External Magnetic Field on Injected Charges of a Cr2O3/Fe/CeO2/Si MIS Capacitor
TL;DR: In this article, the influence of an external magnetic field for the carrier injection process of a metal (Au) / insulator (Cr2O3/Fe/CeO2) / semiconductor (Si) (MIS) capacitor was investigated.
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Relationships between Negative Differential Resistances and Resistance Switching Properties of SrFeO2+x Thin Films with Excess Oxygen
TL;DR: In this paper, an electric field-induced resistance change of SrFeO2+x film was investigated as a candidate for resistance random access memory (RRAM) material, and it was shown that the amount of oxygen in the sample and easiness of oxygen migration play important roles in the resistance-switching properties.
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