Shinya Sugino
Kyoto University
5 Papers
38 Citations
Shinya Sugino is an academic researcher from Kyoto University. The author has contributed to research in topics: Dielectric & Bond energy. The author has an hindex of 4, co-authored 5 publications.
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Papers
Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
Naoto Umezawa,Kenji Shiraishi,Shinya Sugino,A. Tachibana,Kenji Ohmori,Kenji Ohmori,Kuniyuki Kakushima,Hiroshi Iwai,Toyohiro Chikyow,Takeo Ohno,Yasuo Nara,Kizuku Yamada +11 more
TL;DR: In this paper, the effects of lanthanum incorporation into HfO2 dielectrics were studied using first-principles total energy calculations, and it was shown that the formation energy of a neutral oxygen vacancy (VO0) in the vicinity of substitutional La atoms at Hf sites is 0.7eV larger than that in pure Hf O2, indicating that the concentration of VO0's is drastically reduced by La incorporation.
65
Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects
Motoyuki Sato,Naoto Umezawa,J. Shimokawa,Hiroaki Arimura,Shinya Sugino,A. Tachibana,M. Nakamura,Nobuyuki Mise,S. Kamiyama,Tetsu Morooka,T. Eimori,Kenji Shiraishi,Kikuo Yamabe,Heiji Watanabe,Kizuku Yamada,T. Aoyama,Toshihide Nabatame,Yasuo Nara,Yuzuru Ohji +18 more
- 01 Dec 2008
TL;DR: In this article, the authors clarified the impact on reliability of La incorporation into the HfSiON gate dielectrics nMOSFETs (PBTI, TDDB).
27
Local Dielectric Property of Hafnium and Lanthanum Atoms in HfLaOx
TL;DR: In this article, the electronic contribution to local dielectric properties of La2O3 and HfO2 using cluster models is investigated, and it is shown that the contribution from the bond regions is not so large.
16
Electronic structure study of local dielectric properties of lanthanoid oxide clusters
Kentaro Doi,Yutaka Mikazuki,Shinya Sugino,Tatsuki Doi,Paweł Szarek,Masato Senami,Kenji Shiraishi,Hiroshi Iwai,Naoto Umezawa,Toyohiro Chikyo,Keisaku Yamada,Akitomo Tachibana +11 more
TL;DR: In this article, density functional calculations are performed for lanthanum-oxide clusters in order to study the local dielectric properties of such clusters using the Dielectric Constant defined at local points.
Local Model Analysis of Gate Insulator Oxides
Kentaro Doi,Yutaka Mikazuki,Shinya Sugino,Akitomo Tachibana +3 more
- 01 Oct 2006
TL;DR: In this article, a local analysis for modeling gate insulator oxides in nano-CMOS devices based on rigged QED theory is presented to link the correlation between the chemical bonds and dielectric properties.