Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magnetic
metal/oxide interfaces [for instance Co(Fe)/alumina]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large—comparable to that measured at Co/Pt interfaces, a reference for large interfacial anisotropy (anisotropy ∼1.4 erg/cm2 = 1.4 mJ/m2). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB/MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current, thanks to a relatively weak Gilbert damping. These two requirements for memories tend to be difficult to reconcile since they rely on the same spin-orbit coupling. PMA-based approaches have now become ubiquitous in the designs for perpendicular STT-MRAM, and major microelectronics companies are actively working on their development with the first goal of addressing embedded FLASH and static random access memory-type of applications. Scalability of STT-MRAM devices based on this interfacial PMA is expected to soon exceed the 20-nm nodes. Several very active new fields of research also rely on interfacial PMA at magnetic metal/oxide interfaces, including spin-orbit torques associated with Rashba or spin Hall effects, record high speed domain wall propagation in buffer/magnetic metal/oxide-based magnetic wires, and voltage-based control of anisotropy. This review deals with PMA at magnetic metal/oxide interfaces from its discovery, by examining the diversity of systems in which it has been observed and the physicochemical methods through which the key roles played by the electronic hybridization at the metal/oxide interface were elucidated. The physical origins of the phenomenon are also covered and how these are supported by ab initio calculations is dealt with. Finally, some examples of applications of this interfacial PMA in STT-MRAM are listed along with the various emerging research topics taking advantage of this PMA.

/pdf/perpendicular-magnetic-anisotropy-at-transition-metal-oxide-5byi6mpn4x.pdf

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.

https://iopscience.iop.org/article/10.1088/0953-8984/24/33/333201/pdf

Electric field control of magnetism in multiferroic heterostructures

/pdf/electric-field-control-of-magnetism-in-multiferroic-1d70g5sjfm.pdf

Voltage control of magnetic anisotropy (VCMA) in an ultrathin ferromagnet metal layer is a promising approach for ultralow-power spin manipulation, but interface effects spoil its efficiency for applications such as memory devices. The authors study VCMA in the fully epitaxial ultrathin Fe layer of a magnetic tunnel junction, and achieve an efficiency of almost 300 fJ V${}^{-1}$ m${}^{-1}$ with high perpendicular anisotropy, which satisfies the requirements for gigabit-class spintronic memory.

Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

The control of the magnetism of ultra-thin ferromagnetic layers using an electric field, rather than a current, has many potential technologically important applications. It is usually insisted that such control occurs via an electric field induced surface charge doping that modifies the magnetic anisotropy. However, it remains the case that a number of key experiments cannot be understood within such a scenario. Much studied is the spin-splitting of the conduction electrons of non-magnetic metals or semi-conductors due to the Rashba spin-orbit coupling. This reflects a large surface electric field. For a magnet, this same splitting is modified by the exchange field resulting in a large magnetic anisotropy energy via the Dzyaloshinskii-Moriya mechanism. This different, yet traditional, path to an electrically induced anisotropy energy can explain the electric field, thickness, and material dependence reported in many experiments.

Rashba Spin-Orbit Anisotropy and the Electric Field Control of Magnetism

We have investigated the electric field (EF) effect on the magnetic anisotropy energy (MAE) in thin films MgO/Fe/M(001) (M = Au and Pt) by means of first-principles density-functional calculations. The EF dependence of the MAE is enhanced significantly in the film with the Pt substrate compared to that with the Au substrate. This enhancement is attributed to the EF-induced hybridization between Fe 3d- and Pt 5d-orbitals. This implies that the Pt layer stacked on the magnetic layer strengthens the sensitivity of devices for bias-voltage-induced magnetic control.

A comparative ab initio study on electric-field dependence of magnetic anisotropy in MgO/Fe/Pt and MgO/Fe/Au films

We have investigated the electric field (EF) effect on the magnetic anisotropy energy (MAE) in the thin films MgO/M/Fe/Au(001) and MgO/Fe/M(001) (M = Pd, Pt, and Au) by means of first-principles density-functional calculations. We find that the MAE varies linearly with the EF and investigate the change in slope of the MAE as a function of the EF as the buffer layer is changed. We find that a single monatomic buffer layer may be useful for devices that use EF-modified MAE. We simulate the critical EF for easy-axis rotation and discuss interface effects of Mg/Fe and Fe/Au on MAE.

Effect of atomic monolayer insertions on electric-field-induced rotation of magnetic easy axis

Electric-field (EF) effects have been studied on magnetic anisotropy in the metallic surfaces Pt/Fe/Pt(0 0 1) and Pd/Fe/Pd(0 0 1) by means of the first-principles electronic structure calculation which employs the generalized gradient approximation. The variation of anisotropy energy with respect to the EF is found to be opposite to each other. The modulus rate of the variation is larger by a few factors in the Pt substrate than in the Pd one. These results agree qualitatively well with the available experimental data. The electronic structures are presented and the origins in EF effects are discussed along a line of the second perturbative fashion.

/pdf/electric-field-effects-on-magnetic-anisotropy-in-pd-fe-pd-0-488gx542ub.pdf

Electric-field effects on magnetic anisotropy in Pd/Fe/Pd(0 0 1) surface

We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion but also under some electron accumulation conditions, showing a strong correlation with the number of electrons on the interface Fe atom. The reverse variation in the MAE under the electric field is ascribed to novel features on the charged interface, such as electron leakage. We discuss the origin of the variation in terms of the electronic structures.

https://iopscience.iop.org/article/10.7567/APEX.7.113005/pdf

Possible origin of nonlinear magnetic anisotropy variation in electric field effect in a double interface system

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Papers

A comparative ab initio study on electric-field dependence of magnetic anisotropy in MgO/Fe/Pt and MgO/Fe/Au films

Effect of atomic monolayer insertions on electric-field-induced rotation of magnetic easy axis

Electric-field effects on magnetic anisotropy in Pd/Fe/Pd(0 0 1) surface

Possible origin of nonlinear magnetic anisotropy variation in electric field effect in a double interface system

Possible origin of nonlinear magnetic anisotropy variation in electric field effect in a double interface system