Shinya Aikawa
Kogakuin University
50 Papers
201 Citations
Shinya Aikawa is an academic researcher from Kogakuin University. The author has contributed to research in topics: Thin-film transistor & Carbon nanotube. The author has an hindex of 17, co-authored 47 publications. Previous affiliations of Shinya Aikawa include Tokyo University of Science & National Institute for Materials Science.
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Papers
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
Mahito Yamamoto,Sheng Tsung Wang,Mei-Yan Ni,Mei-Yan Ni,Yen-Fu Lin,Yen-Fu Lin,Song-Lin Li,Shinya Aikawa,Wen-Bin Jian,Keiji Ueno,Katsunori Wakabayashi,Kazuhito Tsukagoshi +11 more
TL;DR: The observations point to strong effects of dimensionality on the phonon properties of MoTe2, which shows a prominent peak of the in-plane E(1)2g mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides.
327
Self-limiting layer-by-layer oxidation of atomically thin WSe2.
Mahito Yamamoto,Sudipta Dutta,Shinya Aikawa,Shu Nakaharai,Katsunori Wakabayashi,Michael S. Fuhrer,Michael S. Fuhrer,Keiji Ueno,Kazuhito Tsukagoshi +8 more
TL;DR: It is found that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped, offering a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.
240
Enhanced thermal conductivity of ethylene glycol with single-walled carbon nanotube inclusions
Sivasankaran Harish,Kei Ishikawa,Erik Einarsson,Shinya Aikawa,Shinya Aikawa,Shohei Chiashi,Junichiro Shiomi,Shigeo Maruyama +7 more
TL;DR: In this paper, the authors reported measurements of the effective thermal conductivity of dispersions of single-walled carbon nanotube (SWNT) suspensions in ethylene glycol.
142
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
TL;DR: In this paper, the bond-dissociation energy of the dopant was used to improve the electrical properties of metal-oxide thin-film transistors for flat-panel displays.
132
Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
Nobuhiko Mitoma,Shinya Aikawa,Xu Gao,Takio Kizu,Maki Shimizu,Meng-Fang Lin,Toshihide Nabatame,Kazuhito Tsukagoshi +7 more
TL;DR: In this article, a SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 ˚°C, and increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.
98