Laser-induced graphene (LIG) is a simple, environmentally friendly, efficient, and less costly method, as well as can form various shapes on a flexible substrate in situ without the use of masks. More importantly, it can tune the work function of LIG easily by changing laser parameters to control the transportation of carriers. In this work, the work functions of LIG were controlled by adjusting the frequency or speed of the laser, and a series of LIG/GaOx Schottky photodetectors were formed. When the work function of the graphene increases, the Fermi energy is shifted below the crossing point of the Π and Π* bands, and then more electrons or holes can be activated to participate in the conduction process, resulting in low resistance. Meanwhile, a large built-in electric field can be formed when using a high work function LIG, which is more beneficial to separate photo-generated carriers. Enabled by the controllable LIG, LIG/GaOx Schottky photodetectors can be modulated to have high photoresponsivity or self-powered characteristics. Our work provides a high-performance photodetector with excellent mechanical flexibility and long-life stability, promising applications in the flexible optoelectronic fields.

Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors

Antimony selenide (Sb2Se3) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high-performance self-powered Sb2Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb2Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin-film photodetector performance. Furthermore, aluminum (Al3+) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2Se3/CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2Se3/CdS (Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W−1 (at 11 nW/cm2), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 106 and signal-to-noise ratio of 109, record total noise determined realistic detectivity of 4.78 × 1012 Jones, and ultra-fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2Se3-based photodetectors. This intriguing work opens up an avenue for its self-powered broadband photodetector applications. 

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/inf2.12400

Carrier recombination suppression and transport enhancement enable high‐performance self‐powered broadband
 
 Sb
 2
 Se
 3
 
 photodetectors

For optoelectronic devices that convert optical signal to electrical signal, they can have a fast photoresponse speed to function as a photodetector, or possess the ability to perceive, memorize and process images to act as a neuromorphic vision sensor (NVS). However, the simultaneous implementation of photodetector and NVS on a single device faces a great challenge, due to the contradiction of photoresponse speed. In this work, to simultaneous achieve this complex function in a single device, trench-bridged GaN/Ga2 O3 /GaN back-to-back double heterojunction array device is fabricated. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga2 O3 . Consequently, the role of the optoelectronic device can be altered between photodetector and NVS by simply adjusting the bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as a NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both the recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device, but also provide the opportunities to implement advanced robotic vision systems and neuromorphic computing. This article is protected by copyright. All rights reserved.

Dual-mode Conversion of Photodetector And Neuromorphic Vision Sensor via Bias Voltage Regulation on A Single Device.

High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium–tin–oxide electrodes

In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and β) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an in situ GaON dielectric layer improved the responsivity of Ga2O3/p-GaN photodetectors by 20 times. All Ga2O3/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a Iphoto/Idark ratio of 4.1 × 103 (1.8 × 103) under 254 nm (365 nm) light were obtained for the β-Ga2O3/p-GaN photodetector at 0 V bias. Furthermore, the β-Ga2O3/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 1014 Jones (2.44 × 1013 Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the Ga2O3/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered Ga2O3/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.

A General Strategy to Ultrasensitive Ga2O3 Based Self-Powered Solar-blind Photodetectors

To improve the radial suspension force of heteropolar hybrid magnetic bearing (HMB), a novel AC six-pole heteropolar HMB is proposed. Firstly, the structure, magnetic circuit, and suspension force generation principle are introduced and analyzed. Secondly, the equivalent magnetic circuits are established. The mathematical models of magnetic resistances, air gap magnetic fluxes, and levitation force are derived by node magnetomotive force (MMF) method. The main parameters of prototype heteropolar HMB, such as outer and inner air-gap length, winding turns, and permanent magnets, are designed. Then, the analysis model is established by MagNet 3D. The magnetic circuit, air-gap flux density, suspension mechanism, force-current relationships, force-displacement relationships, and force coupling characteristics are analyzed and calculated. Finally, the experimental system was built to test the levitation force and levitation displacement waveforms. The research results have shown that the proposed novel six-pole heteropolar HMB has a reasonable structure and magnetic circuit. The design method is also proven to be correct. Furthermore, it is compared with the traditional heteropolar six-pole HMB, the maximum suspension forces in the X and Y directions are increased by 1.96 and 2.02 times, respectively.

/pdf/modeling-design-and-suspension-force-analysis-of-a-novel-ac-1zhp5trp.pdf

Modeling, Design and Suspension Force Analysis of a Novel AC Six-Pole Heteropolar Hybrid Magnetic Bearing

Equalizing charger based on multi-windings transformer and voltage-doubler rectifiers

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A General Strategy to Ultrasensitive Ga2O3 Based Self-Powered Solar-blind Photodetectors

Modeling, Design and Suspension Force Analysis of a Novel AC Six-Pole Heteropolar Hybrid Magnetic Bearing

Equalizing charger based on multi-windings transformer and voltage-doubler rectifiers

Equalizing charger based on multi-windings transformer and voltage-doubler rectifiers