Seung-Eun Lee
Hanyang University
12 Papers
52 Citations
Seung-Eun Lee is an academic researcher from Hanyang University. The author has contributed to research in topics: Spin valve & Tunnel magnetoresistance. The author has an hindex of 10, co-authored 12 publications.
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Papers
The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2 free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions
Min-Su Jeon,Kyo-Suk Chae,Du-Yeong Lee,Yasutaka Takemura,Seung-Eun Lee,Tae-Hun Shim,Jea-Gun Park +6 more
TL;DR: The tunnel magnetoresistance (TMR) ratio of a cobalt-iron-boron (CoFeB)-based perpendicular-magnetic-tunnel-junction (p-MTJ) spin valve is extremely sensitive to both nanoscale Co2Fe6B2 free- and pinned-layer thicknesses, determining the crystallinity of the MgO tunneling barrier and the TMR ratio.
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Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction.
TL;DR: It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness.
Highly Enhanced TMR Ratio and Δ for Double MgO-based p-MTJ Spin-Valves with Top Co 2 Fe 6 B 2 Free Layer by Nanoscale-thick Iron Diffusion-barrier.
TL;DR: In this paper, the insertion of a nanoscale-thickness Fe diffusion barrier between the tungsten (W) capping layer and MgO capping layers improved the face-centered-cubic (f.c.) crystallinity of both the mgO and tunneling barrier.
Challenging issues for terra-bit-level perpendicular STT-MRAM
Jea-Gun Park,Tae Hun Shim,K. S. Chae,Du Yeong Lee,Y. Takemura,Seung-Eun Lee,Min-Su Jeon,J. U. Baek,S.O. Park,J. P. Hong +9 more
- 01 Dec 2014
TL;DR: In this paper, the authors proposed a double MgO-based p-MTJ spin-valve to satisfy Δ of > 74, and J ex in SyAF layer adequately met > 0.7erg/cm2 at BEOL of > 350°C.
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Highly Enhanced TMR Ratio and Δ for Double MgO-Based p-Mtj Spin-Valves with Top Co2Fe6B2 Free Layer By Nanoscale-Thick Iron Diffusion-Barrier
Seung-Eun Lee,Jong-Ung Baek,Tae-Hun Shim,Jinpyo Hong,Jea-Gun Park +4 more
- 01 Sep 2016
TL;DR: For double MgO-based p-MTJ spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C, the insertion of a nanoscale-thickness Fe diffusion barrier improved the face-centered-cubic (f.c.c.) crystallinity of both the MGO capping layer and tunneling barrier by dramatically reducing diffusion of W atoms.
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