Seul Ji Song
Seoul National University
45 Papers
406 Citations
Seul Ji Song is an academic researcher from Seoul National University. The author has contributed to research in topics: Resistive random-access memory & Atomic layer deposition. The author has an hindex of 28, co-authored 45 publications.
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Papers
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok,Jun Yeong Seok,Seul Ji Song,Jung Ho Yoon,Kyung Jean Yoon,Tae Hyung Park,Dae Eun Kwon,Hyungkwang Lim,Hyungkwang Lim,Gun Hwan Kim,Doo Seok Jeong,Cheol Seong Hwang +11 more
TL;DR: In this article, two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. But these have critical correlations, however, and depend on the involved types of resistance switching memory.
372
Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure
Jung Ho Yoon,Seul Ji Song,Il-Hyuk Yoo,Jun Yeong Seok,Kyung Jean Yoon,Dae Eun Kwon,Tae Hyung Park,Cheol Seong Hwang +7 more
TL;DR: In this article, a two-layered dielectric structure consisting of HfO2 and Ta2O5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration.
241
32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
Gun Hwan Kim,Jong-Ho Lee,Youngbae Ahn,Woojin Jeon,Seul Ji Song,Jun Yeong Seok,Jung Ho Yoon,Kyung Jean Yoon,Tae Joo Park,Cheol Seong Hwang +9 more
TL;DR: In this paper, the performance of 1-diode and 1-resistor stacked crossbar array (1D1R CA) devices with Schottky diode (SD) and resistive switching (RS) memory cell was investigated.
175
Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Jung Ho Yoon,Kyung-min Kim,Seul Ji Song,Jun Yeong Seok,Kyung Jean Yoon,Dae Eun Kwon,Tae Hyung Park,Young Jae Kwon,Xinglong Shao,Cheol Seong Hwang +9 more
TL;DR: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
166
A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.
Woo Young Park,Gun Hwan Kim,Jun Yeong Seok,Kyung-Min Kim,Seul Ji Song,Min Hwan Lee,Cheol Seong Hwang +6 more
TL;DR: It is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
146