Servane Blanqué
University of Montpellier
7 Papers
28 Citations
Servane Blanqué is an academic researcher from University of Montpellier. The author has contributed to research in topics: Ion implantation & Annealing (metallurgy). The author has an hindex of 4, co-authored 7 publications.
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Papers
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Servane Blanqué,Ramon Pérez,Phillippe Godignon,Narcis Mestres,Erwan Morvan,Alexandre Kerlain,Christian Dua,Christian Brylinski,Marcin Zielinski,Jean Camassel +9 more
TL;DR: In this article, a comparative investigation of the activation kinetics of nitrogen and phosphorus ions implanted at room temperature in 4H-SiC semi-insulating substrates is presented.
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Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers
Servane Blanqué,Ramon Pérez,Narcis Mestres,Sylvie Contreras,Jean Camassel,Phillippe Godignon +5 more
TL;DR: In this paper, the influence of the temperature ramp parameters such as rise/decrease temperature speed and intermediate annealing steps on the dopant activation rate and surface morphology has been investigated.
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Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
Phillippe Godignon,Christophe Jacquier,Servane Blanqué,Josep Montserrat,Gabriel Ferro,Sylvie Contreras,Marcin Zielinski,Yves Monteil +7 more
TL;DR: In this paper, the VLS mechanism in Al-Si melt has been used for growing epitaxial 4H-SiC layers at low temperature (1100°C) with a high amount of Aluminum (>10 20 at.cm 2 ).
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