Atomic layer deposition (ALD) has been receiving more and more research attention in the past few decades, ascribed to its unrivaled capabilities in controlling material growth with atomic precision, manipulating novel nanostructures, tuning material composition, offering multiple choices in terms of crystallinity, and producing conformal and uniform film coverage, as well as its suitability for thermally sensitive substrates. These unique characteristics have made ALD an irreplaceable tool and research approach for numerous applications. In this review, we summarize the recent advances of ALD in several important areas including rechargeable secondary batteries, fuel cells, solar cells, and optoelectronics. With this review, we expect to exhibit ALD's versatile potential in providing unique solutions to various technical challenges and also hope to further expand ALD's applications in emerging areas.

Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology

Advances in materials and mechanics designs have led to the development of flexible electronics, which have important applications to human healthcare due to their good biocompatibility and conformal integration with biological tissue. Material innovation and mechanics design have played a key role in designing the substrates and encapsulations of flexible electronics for various bio-integrated systems. This review first introduces the inorganic materials and novel organic materials used for the substrates and encapsulation of flexible electronics, and summarizes their mechanics properties, permeability and optical transmission properties. The structural designs of the substrates are then introduced to ensure the reliability of flexible electronics, including the patterned and pre-strained designs to improve the stretchability, and the strain-isolation and -limiting substrates to reduce the deformation. Some emerging encapsulations are presented to protect the flexible electronics from degradation, environmental erosion or contamination, though they may slightly reduce the stretchability of flexible electronics.

Material innovation and mechanics design for substrates and encapsulation of flexible electronics: a review

https://hal.archives-ouvertes.fr/hal-02012583/document

Speeding up the unique assets of atomic layer deposition

Growth of thin barrier films on flexible polymer substrates by atomic layer deposition

Optoelectronic materials can source, detect, and control light wavelengths ranging from gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are usually systems that transduce electricity to optical signal or vice versa. Optoelectronic devices include many modern necessities such as lamps, displays, lasers, solar cells, and various photodetectors. Some important research topics in the field of optoelectronics materials are development of new materials, new technologies for fabricating materials, and design of device structures. Atomic layer deposition (ALD) is a technology that was developed in the early 1970s for manufacturing high-quality luminescent and dielectric films to be used in AC-driven thin film electroluminescent (TFEL) displays. Monochromic yellow-black displays based on a ZnS:Mn luminescent layer have been manufactured industrially using ALD since the mid-1980s. Multicolor displays (green-yellow-red) were successfully realized by filtering the broad emission band of ZnS:Mn or adding another luminescent material, e.g., green-emitting ZnS:Tb or SrS:Ce. However, applicable full-color AC TFEL devices could not be developed because of the lack of an efficient deep blue-emitting phosphor. Currently, the most promising application area in TFEL displays is transparent displays, which are commonly used in various vehicles. In the mid-1980s, epitaxial III-V semiconductors were studied using ALD. It was shown that manufacturing real epitaxial [atomic layer epitaxy (ALE)] films is possible for different III (Al, Ga, In) and V (N, P, As) materials. The advantages of ALE processing compared to more traditional metalorganic chemical vapor deposition or molecular beam epitaxy methods have remained low, however, and ALE is not used on a large scale. Research continues to be carried out using ALE, especially with nitride films. Thin film solar cells have continuously received attention in ALD research. ALD films may be used as both an absorber (CdTe, SnS) and a passivation [In2S3, Zn(O,S)] material. However, in the solar cell field, the real industrial-level use is in passivation of silicon cells. Thin ALD Al2O3 film effectively passivates all types of silicon cells and improves their efficiency. Transition metal dichalcogenides are emerging 2D materials that have potential uses as channel materials in field-effect transistors, as well as phototransistors and other optoelectronic devices. The problem with achieving large-scale use of these 2D materials is the lack of a scalable, low-temperature process for fabricating high-quality, large-area films. ALD is proposed as a solution for these limitations. This review covers all of these ALD applications in detail.Optoelectronic materials can source, detect, and control light wavelengths ranging from gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are usually systems that transduce electricity to optical signal or vice versa. Optoelectronic devices include many modern necessities such as lamps, displays, lasers, solar cells, and various photodetectors. Some important research topics in the field of optoelectronics materials are development of new materials, new technologies for fabricating materials, and design of device structures. Atomic layer deposition (ALD) is a technology that was developed in the early 1970s for manufacturing high-quality luminescent and dielectric films to be used in AC-driven thin film electroluminescent (TFEL) displays. Monochromic yellow-black displays based on a ZnS:Mn luminescent layer have been manufactured industrially using ALD since the mid-1980s. Multicolor displays (green-yellow-red) were successfully realized by filtering the broad emission...

https://avs.scitation.org/doi/pdf/10.1116/1.5083692

Review Article: Atomic layer deposition of optoelectronic materials

The authors developed a high throughput (70 A/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al2O3 films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm2) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 A/cycle was achieved using trimethylaluminum as an Al source and O3 as an O reactant. The morphological features and step coverage of the Al2O3 films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al2O3 films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission r...

Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

We have developed high throughput and scalable space divided atomic layer deposition (ALD) system for thin filmencapsulation (TFE) of flexible OLEDs display. In this paper, we report high moisture barrier properties of Al2O3 films deposited by our new developed high throughput (70 A/min) spatial ALD with 2G glass substrate size (370 × 470 mm2). The WVTR on flexible substrate could achieve ∼10−5 g/m2-day under tritium test.

71.1: High Throughput and Scalable Spatial Atomic Layer Deposition of Al2O3 as a Moisture Barrier for Flexible OLED Display

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Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

71.1: High Throughput and Scalable Spatial Atomic Layer Deposition of Al2O3 as a Moisture Barrier for Flexible OLED Display