Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

/pdf/nanoscale-control-of-an-interfacial-metal-insulator-4krnzbxlgp.pdf

Nanoscale Control of an Interfacial Metal-Insulator Transition at Room Temperature

Electrical switching to multiple novel metastable states in a correlated two-dimensional crystal. Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals including graphene, transition metal dichalcogenides, and black phosphorus. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significantly changed from bulk systems. However, there are few attempts to realize novel phenomena in correlated 2D crystals. We report memristive phase switching in nano-thick crystals of 1T-type tantalum disulfide (1T-TaS2), a first-order phase transition system. The ordering kinetics of the phase transition were found to become extremely slow as the thickness is reduced, resulting in an emergence of metastable states. Furthermore, we realized unprecedented memristive switching to multistep nonvolatile states by applying an in-plane electric field. The reduction of thickness is essential to achieve such nonvolatile electrical switching behavior. The thinning-induced slow kinetics possibly make the various metastable states robust and consequently realize the nonvolatile memory operation. The present result indicates that a 2D crystal with correlated electrons is a novel nano-system to explore and functionalize multiple metastable states that are inaccessible in its bulk form.

http://absimage.aps.org/image/MAR16/MWS_MAR16-2015-005224.pdf

Memristive phase switching in two-dimensional 1T-TaS2 crystals

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices (Adv. Funct. Mater. 1/2023)

There is a great interest in portable gas sensing technologies to provide real-time monitoring of indoor and outdoor air quality as well as the human health diagnostics. One-dimensional metal oxide nanowires have demonstrated improved properties compared to the conventional thick film gas sensors. Furthermore, two-dimensional semiconductor nanomaterials have shown great promise for the development of high performance functional devices owing to their unique physical, chemical and electrical characteristics. Hence, they become one of the most investigated structures for the fabrication of detection systems. Herein, we present an overview of the synthesis and sensing properties of metal oxide nanowires and two-dimensional semiconductor nanostructures such as metal-organic frameworks, graphene and transition metal dichalcogenides. We discuss the current achievements and issues in the preparation of pure, doped and composite materials comprising metal oxide nanowires and two-dimensional semiconductors. Then, we discuss the advances in gas sensing performances of the aforementioned materials considering their morphology, compositions and structure. Afterward, we provide a brief summary along with the opportunities and challenges for future fabrication of high performance and small size gas sensing devices. 

Progress towards chemical gas sensors: Nanowires and 2D semiconductors

Neuromorphic circuits emulating the bio‐brain functionality via artificial devices have achieved a substantial scientific leap in the past decade. However, even with the advent of highly advanced bio‐inspired algorithms, the artificial intelligence based on current neuromorphic circuits is lagging behind significantly when compared with naturally evolved biological neural circuits. This massive and intriguing discrepancy is partly due to the incomprehensive understanding of bio‐brain operating mechanism, which relies heavily on the extremely complexed entangled 3D hierarchical neural networks. Configuring 3D neuromorphic hardware with combined computing and memory functionalities, coupled with compatible progress of software algorithms, can be an inevitable route to surmount the limitation encountered by current 2D artificial circuits. Herein, referring to the neuron configuration in 3D perspective together with detailed signal generation and propagation mechanism, the von Neumann configuration is compared with state‐of‐the‐art in‐memory computing architecture, and the development and perspectives of 3D in‐memory computing neuromorphic circuits are highlighted.

Bio‐Inspired 3D Artificial Neuromorphic Circuits

Ferroelectric P(VDF-TrFE) wrapped InGaAs nanowires for ultralow-power artificial synapses

Antimony-Rich GaAsxSb1−x Nanowires Passivated by Organic Sulfides for High-Performance Transistors and Near-Infrared Photodetectors

Quantum Artificial Synapses

Superior Performance and Stability of 2D Dion–Jacobson Halide Perovskite Photodetectors Operated under Harsh Conditions without Encapsulation

Low-dimensional nanomaterials have been proven as promising high-performance gas sensing components due to their fascinating structural, physical, chemical, and electronic characteristics. In particular, materials with low dimensionalities (i.e., 0D, 1D, and 2D) possess an extremely large surface area-to-volume ratio to expose abundant active sites for interactions with molecular analytes. Gas sensors based on these materials exhibit a sensitive response to subtle external perturbations on sensing channel materials via electrical transduction, demonstrating a fast response/recovery, specific selectivity, and remarkable stability. Herein, we comprehensively elaborate gas sensing performances in the field of sensitive detection of hazardous gases with diverse low-dimensional sensing materials and their hybrid combinations. We will first introduce the common configurations of gas sensing devices and underlying transduction principles. Then, the main performance parameters of gas sensing devices and subsequently the main underlying sensing mechanisms governing their detection operation process are outlined and described. Importantly, we also elaborate the compositional and structural characteristics of various low-dimensional sensing materials, exemplified by the corresponding sensing systems. Finally, our perspectives on the challenges and opportunities confronting the development and future applications of low-dimensional materials for high-performance gas sensing are also presented. The aim is to provide further insights into the material design of different nanostructures and to establish relevant design guidelines to facilitate the device performance enhancement of nanomaterial based gas sensors.

/pdf/high-performance-electrically-transduced-hazardous-gas-2bkzh1f8q2.pdf

High-performance electrically transduced hazardous gas sensors based on low-dimensional nanomaterials

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