Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and /spl gamma/-ray detection. The high atomic number of the materials (Z/sub Cd/=48, Z/sub Te/=52) gives a high quantum efficiency in comparison with Si. The large bandgap energy (Eg/spl sim/1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this paper we summarize 1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and 2) the technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and /spl gamma/-ray astronomy missions are briefly discussed.

Recent progress in CdTe and CdZnTe detectors

As a result of a cooperation between Brookhaven National Laboratory and eV Products a generation of high performance readout ASICs was developed. The ASICs, realized in CMOS 0.5 /spl mu/m technology, are available in several different versions, single or multi-channel and with unipolar or bipolar shaper, in view of their use in research, spectroscopy, medical, safeguard and industrial applications. Four innovative circuit solutions are implemented in the ASICs: (i) a high linearity compensated continuous reset system which self-adapts to a wide range of detector leakage currents with minimum noise contribution; (ii) a high order shaper realized by using the follow-the-leader feedback (FLF) approach; (iii) a class AB rail-to-rail output stage with high driving capability; (iv) a baseline holder (BLH) for the baseline stabilization. The basic structure of the ASICs, a description of the novel circuit solutions and the preliminary experimental results are reported.

http://www.inst.bnl.gov/~poc/publications/N15-21.pdf

A generation of CMOS readout ASICs for CZT detectors

New sensors and different embodiments of multi-channel integrated circuit are provided. The new high energy and spatial resolution sensors use both solid state and scintillator detectors. Each channel of the readout chip employs low noise charge sensitive preamplifier(s) at its input followed by other circuitry. The different embodiments of the sensors and the integrated circuit are designed to produce high energy and/or spatial resolution two-dimensional and three-dimensional imaging for widely different applications. Some of these applications may require fast data acquisition, some others may need ultra high energy resolution, and a separate portion may require very high contrast. The embodiments described herein addresses all these issues and also other issues that may be useful in two and three dimensional medical and industrial imaging. The applications of the new sensors and integrated circuits addresses a broad range of applications such as medical and industrial imaging, NDE and NDI, security, baggage scanning, astrophysics, nuclear physics and medicine.

Integrated circuit and sensor for imaging

A readout electronics scheme is under development for high resolution, compact PET (positron emission tomography) imagers based on LSO (lutetium ortho-oxysilicate, Lu 2 SiO 5 ) scintillator and avalanche photodiode (APD) arrays. The key is to obtain sufficient timing and energy resolution at a low power level, less than about 30 mW per channel, including all required functions. To this end, a simple leading edge level crossing discriminator is used, in combination with a transimpedance preamplifier. The APD used has a gain of order 1,000, and an output noise current of several pA/√Hz, allowing bipolar technology to be used instead of CMOS, for increased speed and power efficiency. A prototype of the preamplifier and discriminator has been constructed, achieving timing resolution of 1.5 ns FWHM, 2.7 ns full width at one tenth maximum, relative to an LSO/PMT detector, and an energy resolution of 13.6% FWHM at 511 keV, while operating at a power level of 22 mW per channel. Work is in progress towards integration of this preamplifier and discriminator with appropriate coincidence logic and amplitude measurement circuits in an ASIC suitable for a high resolution compact PET instrument. The detector system and/or ASIC can also be used for many other applications for medical to industrial imaging.

X-ray and gamma ray detector readout system

A multi-channel integrated circuit is provided in which each channel has an analog section and a digital section. Each channel of the readout chip employs low noise charge sensitive amplifier at its input followed by other circuitry such as shaper, pole-zero, peak hold, different comparators, buffers and digital control and readout. Each channel produces a self-trigger and a fast timing output. Channel-to-channel time differences are also recorded. Integrated circuit also provides a large dynamic range to facilitate large range of applications. The trigger threshold can be adjusted to provide energy discrimination. The chip has different, externally selectable, operational modes including a sparse readout mode in which only the channels which have received signals greater than a preselected threshold value are read out. The sparse readout mode results in increased data throughput, thus providing fast data acquisition capabilities.

Multi-channel integrated circuit

A mixed signal Application Specific Integrated Circuit chip for front end readout electronics of position sensitive solid state detectors has been developed. It is called RENA. This chip can be used for large number of channels and high energy resolution astrophysics and nuclear physics detectors. It can also be used for medical and industrial imaging of x-rays and gamma rays. The RENA chip is a monolithic integrated circuit and has 32 channels with low noise charge sensitive amplifiers followed by a polarity amplifier and a high quality shaper circuit. It works in pulse counting mode with good energy resolution. It also has a self triggering output which is essential for nuclear applications when the incident radiation arrives at random. Different, externally selectable, operational modes that include a sparse readout mode are available to increase data throughput. It also has externally selectable shaping times. A full scale prototype RENA chip has been manufactured. The preliminary results of test done on the prototype chip are presented.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Test results of the readout electronics for nuclear applications (RENA) chip developed for position-sensitive solid state detectors

A multichannel mixed signal Application Specific Integrated Circuit (ASIC) chip for front end readout electronics of position sensitive solid state detectors has been developed. It is called Readout Electronics for Nuclear Applications (RENA). This chip can be used for large number of channels and high-energy resolution astrophysics and nuclear physics detectors. It can also be applied for medical and industrial imaging of X-rays and gamma rays. The RENA chip is a monolithic integrated circuit and has 32 channels with low-noise high input impedance charge sensitive amplifiers. It works in pulse counting mode with good energy resolution. It also has a self-triggering output which is essential for nuclear applications when the incident radiation arrives at random. Different, externally selectable, operational modes that includes a sparse readout mode is available to increase data throughput. It also has externally selectable shaping (peaking) times. A full-scale prototype RENA chip version III is being manufactured. The results of tests done on the third prototype chip connected to a CdZnTe pad detector array will be presented.

A multichannel readout electronics for nuclear application (RENA) chip developed for position sensitive solid state detectors

Coded mask imagers for future high energy x-ray astronomy missions will require detector planes with areas of hundreds to thousands of cm2 and position resolutions < 1 mm. Such detectors will enable coded mask imagers to discover and study thousands of high energy x-ray sources. The UCSD/WU/UCR/NOVA collaboration has been developing CZT detector systems with crossed-strip readout to meet these requirements. We report progress on a compact detector module with 41 cm2 area and 0.5 mm spatial resolution. The design includes the bias network and ASIC readout electronics, and allows modules to be combined in large area arrays with very high live-area factors. Results from laboratory and balloon flight tests are presented.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Position-sensitive CZT detector module

Recently the need for a higher level of integration in x-ray and gamma ray sensor systems has lead to several approaches of integrating read out electronics in a monolithic integrated circuit (IC). Typically these ICs are limited in their application to a specific problem. The Readout Electronics for Nuclear Applications (RENA) Integrated Circuit, presented here, is targeted for use in many energy sensor applications. The RENA IC has 32 parallel signal channels with, signal polarity control for use with either electron or hole collection from detectors. The input amplifier is optimized for a detector capacitance of 6 pF, but may be used with detector capacitances up to 50 pF. The Shapers' peaking time is digitally selectable, for optimum noise filtering, with peaking times geometrically spaced from 400 ns to 6 microsecond(s) . Up to 16 RENA ASICs may be daisy chained together to make a system with 512 detector channels. Various trigger modes are available with a user- defined threshold over the full signal range of 50K electronics. The circuits in the RENA are designed to be stable with no 'tweaking' control,s which allows an easy user interfaces.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Readout electronics for nuclear applications (RENA) IC

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Test results of the readout electronics for nuclear applications (RENA) chip developed for position-sensitive solid state detectors

A multichannel readout electronics for nuclear application (RENA) chip developed for position sensitive solid state detectors

Position-sensitive CZT detector module

Readout electronics for nuclear applications (RENA) IC