This article reviews recent theoretical and experimental advances in the fundamental understanding and active control of quantum fluids of light in nonlinear optical systems. In the presence of effective photon-photon interactions induced by the optical nonlinearity of the medium, a many-photon system can behave collectively as a quantum fluid with a number of novel features stemming from its intrinsically nonequilibrium nature. A rich variety of recently observed photon hydrodynamical effects is presented, from the superfluid flow around a defect at low speeds, to the appearance of a Mach-Cherenkov cone in a supersonic flow, to the hydrodynamic formation of topological excitations such as quantized vortices and dark solitons at the surface of large impenetrable obstacles. While the review is mostly focused on a specific class of semiconductor systems that have been extensively studied in recent years (planar semiconductor microcavities in the strong light-matter coupling regime having cavity polaritons as elementary excitations), the very concept of quantum fluids of light applies to a broad spectrum of systems, ranging from bulk nonlinear crystals, to atomic clouds embedded in optical fibers and cavities, to photonic crystal cavities, to superconducting quantum circuits based on Josephson junctions. The conclusive part of the article is devoted to a review of the future perspectives in the direction of strongly correlated photon gases and of artificial gauge fields for photons. In particular, several mechanisms to obtain efficient photon blockade are presented, together with their application to the generation of novel quantum phases.

Quantum fluids of light

I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). 
II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). 
III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). 
IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).

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Quantum Transport in Semiconductor Nanostructures

Quasiclassical Green’s function approach to mesoscopic superconductivity

Photon-assisted transport in semiconductor nanostructures

The accuracies of two theoretical expressions for thermal boundary resistance are assessed by comparing their predictions to independent predictions from molecular dynamics (MD) simulations. In one expression $({R}_{E})$, the phonon distributions are assumed to follow the equilibrium, Bose-Einstein distribution, while in the other expression $({R}_{NE})$, the phonons are assumed to have nonequilibrium, but bulk-like distributions. The phonon properties are obtained using lattice dynamics-based methods, which assume that the phonon interface scattering is specular and elastic. We consider (i) a symmetrically strained Si/Ge interface, and (ii) a series of interfaces between Si and ``heavy-Si,'' which differs from Si only in mass. All of the interfaces are perfect, justifying the assumption of specular scattering. The MD-predicted Si/Ge thermal boundary resistance is temperature independent and equal to $3.1\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}9}\text{ }{\text{m}}^{2}\text{-K}/\text{W}$ below a temperature of $\ensuremath{\sim}500\text{ }\text{K}$, indicating that the phonon scattering is elastic, as required for the validity of the theoretical calculations. At higher-temperatures, the MD-predicted Si/Ge thermal boundary resistance decreases with increasing temperature, a trend we attribute to inelastic scattering. For the Si/Ge interface and the Si/heavy-Si interfaces with mass ratios greater than two, ${R}_{E}$ is in good agreement with the corresponding MD-predicted values at temperatures where the interface scattering is elastic. When applied to a system containing no interface, ${R}_{E}$ is erroneously nonzero due to the assumption of equilibrium phonon distributions on either side of the interface. While ${R}_{NE}$ is zero for a system containing no interface, it is 40%--60% less than the corresponding MD-predicted values for the Si/Ge interface and the Si/heavy-Si interfaces at temperatures where the interface scattering is elastic. This inaccuracy is attributed to the assumption of bulk-like phonon distributions on either side of the interface.

Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations

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Superlattices and microstructures

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