Sangam Bhalke
23 Papers
22 Citations
Sangam Bhalke is an academic researcher. The author has contributed to research in topics: Monolithic microwave integrated circuit & Amplifier. The author has an hindex of 3, co-authored 13 publications.
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Papers
Electromagnetic Simulation and Characterization a Metal Ceramic Package for Packaging of High Isolation Switches
TL;DR: In this article, the SPDT MMIC performance degradation was arrested by improvement in the package structure and it showed insertion loss of i1.6dB and input/output (I/O) return losses of 16dB in the new package as compared to the values of i2.1dB and i12dB I/O return losses in the original package.
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MESFET process based planar schottky diode and its application to passive power limiters
Sandeep Chaturvedi,G. Sai Saravanan,K. Mahadeva Bhat,Sangam Bhalke +3 more
- 01 Dec 2013
TL;DR: A planar Schottky diode which is process compatible with general planar MESFET process is described in this article, where the device geometry has been designed and optimized keeping in view the applications up to Ku-band.
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Studies on Microstrip to SIW transition at Ka-Band
Bharath Kunooru,Srujana Vahini Nandigama,D. RamaKrishna,Ravi Gugulothu,Sangam Bhalke +4 more
- 22 May 2019
TL;DR: In this work, mainly the design procedure and formulas are explained for air filled rectangular waveguide (RWG) to SIW and transition between microstrip line and SIW.
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Design and Electrical Characterization of Wafer-level Micro-package for GaAs-based RFMEMS Switches
Sandeep Chaturvedi,G. Sai Saravanan,Mahadeva K. Bhat,Sangam Bhalke,S.L. Badnikar,Rangarajan Muralidharan,Shiban K. Koul +6 more
TL;DR: In this paper, a novel approach for wafer-level encapsulation of GaAs-based RFMEMS switches is described, where both GaAs and Pyrex glass-based caps have been fabricated and the switches were encapsulated.
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Reliability studies of AuGe/Ni/Au ohmic contacts to MESFETs by accelerated thermal aging tests
G. Sai Saravanan,K. Mahadeva Bhat,H. P. Vyas,Sandeep Chaturvedi,Sangam Bhalke,Rangarajan Muralidharan,K. Muaraleedharan,Anand P. Pathak +7 more
- 01 Dec 2007
TL;DR: In this article, the degradation of AuGe/Ni/Au source-drain ohmic contacts at elevated temperatures for 4000 hours was studied and it was found that the drifts in Rc of the optimally alloyed contacts after thermal aging were as low as +13%, which is possibly one of the lowest drifts reported hitherto.
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