J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Progress and prospects of group-III nitride semiconductors

The development of a method for calculating the frequency-dependent second harmonic generation coefficient of insulators and semiconductors based on the self-consistent linearized muffin-tin orbitals band structure method is reported. The calculations are at the independent particle level and are based on the formulation introduced by Aversa and Sipe [Phys. Rev. B 52, 14 636 (1995)]. The terms are rearranged in such a way as to exhibit explicitly all required symmetries including the Kleinman symmetry in the static limit. Computational details and convergence tests are presented. The calculated frequency-dependent ${\ensuremath{\chi}}^{(2)}(\ensuremath{-}2\ensuremath{\omega},\ensuremath{\omega},\ensuremath{\omega})$ for the zinc-blende materials GaAs, GaP and wurtzite GaN and AlN are found to be in excellent agreement with that obtained by other first-principles calculations when corrections to the local density approximation are implemented in the same manner, namely, using the ``scissors'' approach. Similar agreement is found for the static values of ${\ensuremath{\chi}}^{(2)}$ for zinc-blende GaN, AlN, BN, and SiC. The strict validity of the usual ``scissors'' operator implementation is, however, questioned. We show that better agreement with experiment is obtained when the corrections to the low-lying conduction bands are applied at the level of the Hamiltonian, which guarantees that eigenvectors are consistent with the eigenvalues. Results are presented for the frequency-dependent ${\ensuremath{\chi}}^{(2)}(\ensuremath{-}2\ensuremath{\omega},\ensuremath{\omega},\ensuremath{\omega})$ for $3C\ensuremath{-}\mathrm{S}\mathrm{i}\mathrm{C}$. The approach is found to be very efficient and flexible, which indicates that it will be useful for a wide variety of material systems including those with many atoms in the unit cell.

Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors

Recent developments in III-V nitride thin-film materials for electronic and optoelectronic applications are reviewed. The problems that are limiting the development of these materials and devices made from them are discussed. The properties of cubic boron nitride, aluminum nitride, gallium nitride, AlN/GaN solid solutions and heterostructures, and indium nitride are discussed. It is pointed out that the lack of a suitable substrate, with the possible exception of SiC for AlN, is a problem of considerable magnitude. This is compounded by the presence of shallow donor bands in GaN and InN which are apparently caused by N vacancies. The question of whether these vacancies occur (if they do) as a result of intrinsic or extrinsic (as a result of deposition) nonstoichiometry has not been answered. However, the recent advances in the fabrication of p-type GaN and a p-n junction light emitting diode via the electron beam stimulation of the Mg dopant are very encouraging and may considerably advance the technology of this material. This would indicate that self-compensation effects, similar to those observed in ZnO and ZnSe, may not be present in the III-V nitrides, since cubic BN (cBN) AlN and now GaN have been reportedly doped both n- and p-type. >

/pdf/iii-v-nitrides-for-electronic-and-optoelectronic-4mg9v1s1uh.pdf

III-V nitrides for electronic and optoelectronic applications

Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range where low noise lasers are conveniently available The narrow band gap of silicon also makes silicon optomechanical devices susceptible to strong two-photon absorption and free carrier absorption, which often introduce strong thermal effect that limit the devices' stability and cooling performance Further, silicon also does not provide the desired lowest order optical nonlinearity for interfacing with other active electrical components on a chip On the other hand, aluminum nitride (AlN) is a wideband semiconductor widely used in micromechanical resonators due to its low mechanical loss and high electromechanical coupling strength Here we report the development of AlN-on-silicon platform for low loss, wideband optical guiding, as well as its use for achieving simultaneous high optical quality and mechanical quality optomechanical devices Exploiting AlN's inherent second order nonlinearity we further demonstrate electro-optic modulation and efficient second-harmonic generation in AlN photonic circuits Our results suggest that low cost AlN-on-silicon photonic circuits are excellent substitutes for CMOS-compatible photonic circuits for building new functional optomechanical devices that are free from carrier effects

Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics

The nonlinear optical coefficients of AlN have been determined as ‖d33‖= (23.2±35%) dQ11 and ‖d31‖ ≲0.04‖d33‖ for the c‐plate film and for a fundamental beam at 1.064 μm. The result is discussed with reference to the bond‐charge model.

Nonlinear optical susceptibilities of AlN film

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Nonlinear optical susceptibilities of AlN film