S. Poncet
6 Papers
15 Citations
S. Poncet is an academic researcher. The author has contributed to research in topics: Vertical-cavity surface-emitting laser & Quantum well. The author has an hindex of 2, co-authored 6 publications.
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Papers
Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 [micro sign]m
E. Pougeoise,Philippe Gilet,Philippe Grosse,S. Poncet,A. Chelnokov,Jean-Michel Gérard,G. Bourgeois,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +11 more
TL;DR: In this paper, the metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices for optical interconnection applications.
11
1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
Ph. Gilet,E. Pougeoise,L. Grenouillet,Ph. Grosse,Nicolas Olivier,S. Poncet,A. Chelnokov,Jean-Michel Gérard,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +12 more
- 23 Feb 2007
TL;DR: In this paper, the performance of top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GAAs (B) multiple quantum wells (MQW) or InAs/GAs (C) quantum dots (QD), was investigated for optical interconnection applications.
3
GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range
L. Grenouillet,P. Duvaut,N. Olivier,Philippe Gilet,Philippe Grosse,S. Poncet,P. Philippe,E. Pougeoise,Laurent Fulbert,A. Chelnokov +9 more
- 07 Jul 2006
TL;DR: In this paper, the authors developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GAAs quantum wells (QWs) as the active materials.
3
Gallium arsenide second‐window quantum dot VCSEL
E. Pougeoise,Ph. Gilet,N. Dunoyer,Ph. Grosse,S. Poncet,Laurent Grenouillet,Ph. Duvaut,A. Chelnokov,Jean-Michel Gérard,R. Hamelin,C. Rossat +10 more
TL;DR: In this article, a 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting laser with top distributed Bragg reflectors contacts was processed on GaAs substrate.
1
Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs
E. Pougeoise,Ph. Gilet,Ph. Grosse,S. Poncet,A. Chelnokov,Jean-Michel Gérard,G. Bourgeois,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren,S. Vilain,J. S. Bouillard,Gilles Lerondel,Renaud Bachelot,Pascal Royer +16 more
TL;DR: In this paper, the spectral and spatial distributions of the transverse modes were studied by near field scanning optical microscopy using a micropolymer tip at the end of an optical fiber.