The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (≅6×10 13  cm −3 ) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (≅100 V). We present experimental data on the charge collection properties by using 5.486 MeV α-particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the α-particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer.

/pdf/investigation-of-ni-4h-sic-diodes-as-radiation-detectors-2w13i3egta.pdf

Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

Characterisation of epitaxial SiC Schottky barriers as particle detectors

We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 μm pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to (1.34 ± 0.08 × 10$^{16}$) protons cm$^{-2}$ and (1.80 ± 0.18 × 10$^{16}$) protons cm$^{-2}$ respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be 0.62$^{+0.01}$$_{−0.01}$ (stat) $^{+0.06}$$_{−0.06}$ (syst) × 10$^{-18}$ cm$^{2}$ (p μm) $^{-1}$ and the damage constant for diamond irradiated with 800 MeV protons to be 1.04$^{+0.02}$$_{−0.02}$ (stat) $^{+0.04}$$_{−0.05}$ (syst) × 10$^{-18}$ cm$^{2}$ (p μm) $^{-1}$. Moreover, we observe the FWHM/MP pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

/pdf/a-study-of-the-radiation-tolerance-of-poly-crystalline-and-3psyodc6mf.pdf

A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons

Recent results from the CERN RD50 Collaboration for the development of radiation-hard detectors for the LHC upgrade (Super-LHC) and in general for very high luminosity colliders are reported and discussed. Particularly, the attention is focused on Czochralski and Magnetic Czochralski silicon, thin detectors and p-type substrate devices.

Radiation-hard detectors for very high luminosity colliders

Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. The reverse current increase, the variation of the depletion voltage, and their annealing characteristics, as well as the charge collection properties, are presented and discussed.

Lithium ion irradiation effects on epitaxial silicon detectors

Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

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Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders