Study of Indium Tin Oxide (ITO) for Novel Optoelectronic Devices

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

A graphene/single GaAs nanowire Schottky junction photovoltaic device

Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges sinc ...

/pdf/strong-schottky-barrier-reduction-at-au-catalyst-gaas-3pys8iupqh.pdf

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning

The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance–voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current–voltage measurements, is near unity. However, the current–voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the “pinch-off” effect. Traditional current–voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current–voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. Furthermore, the probability of sufficiently energetic incident charge carriers crossing the interface, termed the transmission coefficient, is smaller than that observed in metal Schottky diodes.

Current transport at the p-InP|poly(pyrrole) interface

We have reported a study on current–voltage (I–V) characteristics and capacitance–voltage (C–V) of an Ni/n-GaAs Schottky barrier diode in a wide temperature (T) range of 100–320 K in steps of 20 K, which is prepared by a magnetron direct current sputtering technique. The ideality factor decreases and barrier height (BH) increases with an increase in the temperature. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities in the BH. It has been seen that the junction current is dominated by thermionic field emission. The carrier concentration, diffusion potential, BH, Fermi energy level and the temperature coefficient of the BH have been calculated from the temperature-dependent C–V–T characteristics.

Electronic Transport of an Ni/ n -GaAs Diode Analysed Over a Wide Temperature Range

Careful measurements have been made of the temperature coefficient of the barrier height ( alpha ) and the Richardson constant (A**) for Schottky diodes consisting of Au and Cu contacts on GaAs. The metals were deposited at a pressure of approximately 10-10 Torr so that there is no possibility of an oxide film between metal and semiconductor. The values obtained for alpha were (-2.3+or-0.3)*10-4 eV K-1 and (-3.2+or-0.3)*10-4 eV K-1 for Au and Cu, respectively, the corresponding values of A** being 1.5*104 A m-2 K-2 and 16*104 A m-2 K-2. The values for Al/GaAs diodes obtained previously were (-3.8+or-0.3)*10-4 eV K-1 and 0.41*104 A m-2 K-2. The variation of alpha between metals implies that the interface states which determine the barrier height depend on the metal, and the substantial difference between the values of A** suggest that the band structure of the metal plays a role in determining the reflection coefficient for electron at the interface.

http://iopscience.iop.org/article/10.1088/0268-1242/7/2/007/pdf

On the Richardson constant of intimate metal-GaAs Schottky barriers

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

S P Wilkes

Author Tools

Chat about Author

Papers

On the Richardson constant of intimate metal-GaAs Schottky barriers