S. Nigam
University of Florida
9 Papers
24 Citations
S. Nigam is an academic researcher from University of Florida. The author has contributed to research in topics: Schottky diode & Breakdown voltage. The author has an hindex of 4, co-authored 9 publications.
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Papers
High energy proton irradiation effects on SiC Schottky rectifiers
S. Nigam,Jihyun Kim,Fan Ren,Gilyong Chung,M. F. MacMillan,R. Dwivedi,T. N. Fogarty,Richard Wilkins,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,John R. Williams +11 more
TL;DR: In this article, Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107-5×109 cm−2.
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High Dose Gamma-Ray Irradiation of SiC Schottky Rectifiers
TL;DR: The SiC Schottky rectifiers appears to be stable to very high doses and the observed changes in device performance are due to metal contact failures.
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Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing
TL;DR: In this paper, the Ni Schottky contact showed ohmic behavior and degraded surface morphology at higher temperatures and longer duration, while the reverse characteristics were less affected by the lower temperature anneals than the forward characteristics.
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Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
S. Nigam,Jihyun Kim,B. Luo,Fan Ren,Gilyong Chung,Stephen J. Pearton,John R. Williams,Krishna Shenai,Philip G. Neudeck +8 more
TL;DR: SiC rectifiers with an on/off current ratio of 4×10 5 (at 1.5 V/−500 V) were fabricated using junction termination extension (JTE) and dielectric overlap as discussed by the authors.
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Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers
K. Ip,S. Nigam,K. P. Lee,Kwang Hyeon Baik,G. Y. Chung,M. F. MacMillan,Fan Ren,Stephen J. Pearton +7 more
TL;DR: In this article, a SiC Schottky rectifier was exposed to inductively coupled Ar plasmas as a function of source power (150-750 W), rf chuck power (75-350 W), and process pressure (5-30 mTorr) and the reverse breakdown voltage (VB) was increased by increases in both incident ion energy and ion flux, with the former having the strongest influence.
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