10 Papers
154 Citations
S. Murthy is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Photodetector & Semiconductor laser theory. The author has an hindex of 6, co-authored 10 publications.
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Papers
Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes
M.S. Islam,S. Murthy,Tatsuo Itoh,Ming C. Wu,Dalma Novak,Rod Waterhouse,Deborah L. Sivco,A.Y. Cho +7 more
TL;DR: In this paper, the first demonstration of velocity-matched distributed photodetectors and balanced photodeter with p-i-n photodets was reported. But the authors did not report on the power handling capability of p-I n photodiodes.
CW injection locking of a mode-locked semiconductor laser as a local oscillator comb for channelizing broad-band RF signals
T. Jung,Ji-Lin Shen,Dennis T. K. Tong,S. Murthy,Ming C. Wu,Tawee Tanbun-Ek,Wenshen Wang,Robert Lodenkamper,Richard L. Davis,Lawrence J. Lembo,John C. Brock +10 more
TL;DR: In this paper, the phases of the mode-locked frequency comb are shown to be coherent with that of the master CW laser, and the pulsewidth remains almost unchanged (<2 ps) for a broad range of injection power (-28 to -12 dBm).
A novel monolithic distributed traveling-wave photodetector with parallel optical feed
TL;DR: In this paper, a novel monolithic distributed traveling wave photodetector with parallel optical feed to an array of individual photodiodes using an integrated multimode interference coupler was presented.
Parallel feed travelling wave distributed pin photodetectors with integrated MMI couplers
TL;DR: In this article, a parallel optical feed using an integrated multimode interference (MMI) power splitter helps increase the maximum linear photocurrent through a more uniform distribution of photocurrent.
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Backward-wave cancellation in distributed traveling-wave photodetectors
TL;DR: In this article, a broadband backward-wave-cancelled traveling-wave photodetector with three discrete photodiodes is demonstrated in InGaAs/InGaAsP/InP material systems and operates at 1.55 /spl mu/m.