S. Massetti

TL;DR: In this article, the main features of SiC base material (high energy gap, high electric field breakdown in combination with reasonably high electron mobility and high thermal conductivity 3 times higher than Si -) led to the following expected and in some cases already proven capabilities for power application: low on-state voltage (100 to 200 times lower on resistance x total gate charge with respect to Si), low leakage currents (order of magnitude lower than in Si devices), low recovery charge, fast turn-on and turn-off, high blocking voltage (> 2 KV), high power density,